• [1]

    Masuda K. In: Namba S ed. Proc. Fourth Inter. Conf. on Ion Implantation in Semiconducton and OtherMaterials. New York and London: Plenum Press, 1974. 473-483[2]Stein H J, Vook F L, Border J A. Appl. Phys. Letters, 1969, 14:328-330[3]Dennis J R, Hale E B. J. Appl. Phys., 1978, 49: 1119-1127[4]Morehead F F, Crowder B L. In: Eisen F H and Chadderton L T ed. Ion Implantation. Gorden andBreach Science Publisher, 1971. 25-30[5]Varichenko V S, Zaitsev A M, Kazutchits N M et al. Nucl. Instru. Meths., 1996, B107:268-272[6]Auouard A, Balanzat Fi, Bouffard S et al. Phys. Rev. Lett., 1990, 65:875-878[7]Klaumunzer S. Schumacher G. Phys. Rev. Lett., 1983, 51:1987-1990[8]Lee Y H, Kim Y M, Corbett J W. Rad Effects, 1972, 15:77-82[9]Nelson. In: Proc. European Conf. on Ion Implantation. Stevenage, Herts., England: Peter Peregrinus, 1970.212-216[10]Liu Changlong, Hou Mingdong, Cheng Song et al. High Energy Physics and Nuclear Physics (in Chinese),1998, 22(7):651(刘昌龙，侯明东，程松等。高能物理与核物理，1998,22（7）:651)