Total dose radiation effects on SOI NMOS transistors with different layouts

TIAN Hao; ZHANG Zheng-Xuan; HE Wei; YU Wen-Jie; WANG Ru; CHEN Ming

doi:10.1088/1674-1137/32/8/011

Chinese Physics C> 2008, Vol. 32> Issue(8) : 645-648 DOI: 10.1088/1674-1137/32/8/011

Total dose radiation effects on SOI NMOS transistors with different layouts

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Abstract：
Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10⁶ rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

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[1]

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TIAN Hao, ZHANG Zheng-Xuan, HE Wei, YU Wen-Jie, WANG Ru and CHEN Ming. Total dose radiation effects on SOI NMOS transistors with different layouts[J]. Chinese Physics C, 2008, 32(8): 645-648. doi: 10.1088/1674-1137/32/8/011

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Received: 2007-10-08
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Total dose radiation effects on SOI NMOS transistors with different layouts

Corresponding author: TIAN Hao,

Received Date: 2007-10-08

Accepted Date: 2007-11-02

Available Online: 2008-08-05

Abstract:

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10⁶ rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

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Total dose radiation effects on SOI NMOS transistors with different layouts

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