Total dose radiation effects on SOI NMOS transistors with different layouts

TIAN Hao; ZHANG Zheng-Xuan; HE Wei; YU Wen-Jie; WANG Ru; CHEN Ming

doi:10.1088/1674-1137/32/8/011

Chinese Physics C> 2008, Vol. 32> Issue(8) : 645-648 DOI: 10.1088/1674-1137/32/8/011

Total dose radiation effects on SOI NMOS transistors with different layouts

Abstract
HTML
Reference
Related

PDF

Abstract：
Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10⁶ rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

References

[1]

. Schwank J R, Shaneyfelt M R, Dodd P E et al. IEEE Trans.Nucl. Sci., 2000, 47(6): 21752. HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia et al. Effect of Implanting Silicon in Buried Oxide on the Radiation Hardness of the Partially-Depleted CMOSSOI. In: TANGTing-Ao, RU Guo-Ping, JIANG Yu-Long ed. 2006 8th In-ternational Conference on Solid-State and Integrated Cir-cuit Technology Proceedings. Shanghai: Institute of Elec-trical and Electronics Engineers Press, 2006. 215-2173. HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia et al. HEP NP, 2007, 31(4): 388 (in Chinese)4. HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia et al. Reducing Back Channel Threshold Voltage Shifts of Partially Depleted SOI by Si Ion Implantation. In: Toshiro Hiramotoed. 2006 IEEE International SOI Conference Proceedings.New York: Institute of Electrical and Electronics Engineers Press, 2006. 61-625. Ferlet-Cavrois V, Colladant T, Paillet P et al. IEEE Trans.Nucl. Sci., 2000, 47(6): 21836. YU Wen-Jie, ZHANG Zheng-Xuan et al. HEP NP, 2007,31(9): 819 (in Chinese)7. LIU S T, Balster S, Sinha S et al. IEEE Trans. Nucl. Sci.,1999, 46(6): 18178. Lascoe R C, Osborn J V, Mayer D C et al. Total-dose Tolerance of the Commercial Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 m CMOS Process. In:IEEE Nuclear and Plasma Sciences Society ed. IEEE 2001 Radiation Effects Data Workshop Record. Vancouver: Institute of Electrical and Electronics Engineers Press, 2001.72-769. Milanowski R J, Pagey M P, Massengill L W et al. IEEETrans. Nucl. Sci., 1998, 45(6): 259310. Chan T Y, CHEN J et al. The Impact of Gate-Induced Drain Leakage Current on MOSFET Scaling. In: Electron Devices Society of IEEE ed. Proceedings of the IEEE 1987 International Electron Devices Meeting. New York: Insti-tute of Electrical and Electronics Engineers Press, 1987.718-721

[1]	Jun-Kui Xu , You-Wu Su , Wu-Yuan Li , Wei-Wei Yan , Zong-Qiang Li , Wang Mao , Cheng-Guo Pang , Chong Xu . Study of neutron dose equivalent at the HIRFL deep tumor therapy terminal. Chinese Physics C, 2017, 41(6): 068201. doi: 10.1088/1674-1137/41/6/068201
[2]	Yi Liu , Yunpeng Lu , Xudong Ju , Qun Ou-Yang . Test of a fine pitch SOI pixel detector with laser beam. Chinese Physics C, 2016, 40(1): 016202. doi: 10.1088/1674-1137/40/1/016202
[3]	Ming Xiao , Jie Gao , Dou Wang , Feng Su , Yi-Wei Wang , Sha Bai , Tian-Jian Bian . Study of CEPC performance with different collision energies and geometric layouts. Chinese Physics C, 2016, 40(8): 087001. doi: 10.1088/1674-1137/40/8/087001
[4]	ZHAO Xing , ZHENG Zhong-Shan , LI Bin-Hong , GAO Jian-Tou , YU Fang . Total dose radiation and annealing responses of the backtransistor of Silicon-On-Insulator pMOSFETs. Chinese Physics C, 2015, 39(9): 096101. doi: 10.1088/1674-1137/39/9/096101
[5]	LI Ji , PEI Yuan-Ji , HU Tong-Ning , CHEN Qu-Shan , FENG Guang-Yao , SHANG Lei , LI Cheng-Long . Design of an electron gun for terahertz radiation source. Chinese Physics C, 2014, 38(4): 047004. doi: 10.1088/1674-1137/38/4/047004
[6]	WANG Hua-Lei , CHAI Qing-Zhen , JIANG Jin-Ge , LIU Min-Liang . Rotational properties in even-even superheavy ^254-258Rf nuclei based on total-Routhian-surface calculations. Chinese Physics C, 2014, 38(7): 074101. doi: 10.1088/1674-1137/38/7/074101
[7]	YAN Bin , DENG Lin , HAN Yu , ZHANG Feng , WANG Xian-Chao , LI Lei . Fast local reconstruction by selective backprojection for low dose in dental computed tomography. Chinese Physics C, 2014, 38(10): 108201. doi: 10.1088/1674-1137/38/10/108201
[8]	YANG Lin-Meng , GUO Wen-Jun , ZHANG Fan , NI Sheng . Study of the total reaction cross section via QMD. Chinese Physics C, 2013, 37(10): 104101. doi: 10.1088/1674-1137/37/10/104101
[9]	TANG Xiao , ZHAO Wei , WANG Yan-Fang , SHU Hang , SUN Cui-Li , WEI Cun-Feng , CAO Da-Quan , QUE Jie-Min , SHI Rong-Jian , WEI Long . Monte Carlo simulation of glandular dose in a dedicated breast CT system. Chinese Physics C, 2012, 36(7): 675-680. doi: 10.1088/1674-1137/36/7/019
[10]	ZHOU Shu-Hua . Environmental al effects on nuclear decay rates. Chinese Physics C, 2011, 35(5): 449-452. doi: 10.1088/1674-1137/35/5/008
[11]	ZHOU Feng-Qun , SONG Yue-Li , TUO Fei , KONG Xiang-Zhong . Analysis of the total activation cross section of all possible reactions producing the same radioactive nuclide for the same element. Chinese Physics C, 2011, 35(1): 31-34. doi: 10.1088/1674-1137/35/1/007
[12]	LU Wu , ZHENG Yu-Zhan , WANG Yi-Yuan , REN Di-Yuan , GUO Qi , WANG Zhi-Kuan , WANG Jian-An . Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors. Chinese Physics C, 2011, 35(2): 169-173. doi: 10.1088/1674-1137/35/2/012
[13]	SU You-Wu , LI Zong-Qiang , LI Wu-Yuan , WANG Gui-Ling . Neutron dose measurement in carbon ion radiation therapy at HIRFL (IMP). Chinese Physics C, 2010, 34(5): 548-550. doi: 10.1088/1674-1137/34/5/006
[14]	HAN Yi-Wen , HAO Jia-Bo . Non-thermal Hawking radiation from the Kerr black hole. Chinese Physics C, 2009, 33(2): 94-97. doi: 10.1088/1674-1137/33/2/003
[15]	ZHENG Yu-Zhan , LU Wu , REN Di-Yuan , WANG Gai-Li , YU Xue-Feng , GUO Qi . ELDRS and dose-rate dependence of vertical NPN transistor. Chinese Physics C, 2009, 33(1): 47-49. doi: 10.1088/1674-1137/33/1/010
[16]	LIU Yun-Hong , WANG Rong , CUI Xin-Yu , SUN Xu-Fang . Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells. Chinese Physics C, 2008, 32(S2): 243-246.
[17]	QIAN Cong , ZHANG Zheng-Xuan , ZHANG Feng , LIN Cheng-Lu . Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide. Chinese Physics C, 2008, 32(2): 130-134. doi: 10.1088/1674-1137/32/2/011
[18]	YU Wen-Jie , WANG Ru , ZHANG Zheng-Xuan , QIAN Cong , HE Wei , TIAN Hao , CHEN Ming . Bias Dependence of Total Dose Effect of Partially Depleted SOI MOSFET. Chinese Physics C, 2007, 31(9): 819-822.
[19]	LUO Yin-Hong , GONG Jian-Cheng , ZHANG Feng-Qi , GUO Hong-Xia , YAO Zhi-Bin , LI Yong-Hong , GUO Ning . Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment. Chinese Physics C, 2006, 30(1): 79-83.
[20]	Zhao Jivong , Yang Ping , Jiang Jianhua , Tian Yulian , Han Yong , Wang Chunxi , Shi Caitu , Xian Dingchang . Light Source for Synchrotron Radiation Topographical Study at Beijing Synchrotron Radiation Facility (BSRF). Chinese Physics C, 1992, 16(S3): 235-241.

Access

Get Citation

TIAN Hao, ZHANG Zheng-Xuan, HE Wei, YU Wen-Jie, WANG Ru and CHEN Ming. Total dose radiation effects on SOI NMOS transistors with different layouts[J]. Chinese Physics C, 2008, 32(8): 645-648. doi: 10.1088/1674-1137/32/8/011

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2007-10-08
Revised: 2007-11-02

Article Metric

Article Views(3077)
PDF Downloads(706)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Total dose radiation effects on SOI NMOS transistors with different layouts

Corresponding author: TIAN Hao,

Received Date: 2007-10-08

Accepted Date: 2007-11-02

Available Online: 2008-08-05

Abstract:

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10⁶ rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

HTML

Reference (1)

Total dose radiation effects on SOI NMOS transistors with different layouts

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article