Identification of pore size in porous SiO<SUB>2</SUB> thin film by positron annihilation

ZHANG Zhe; QIN Xiu-Bo; WANG Dan-Ni; YU Run-Sheng; WANG Qiao-Zhan; MA Yan-Yun; WANG Bao-Yi

doi:10.1088/1674-1137/33/2/015

Chinese Physics C> 2009, Vol. 33> Issue(2) : 156-160 DOI: 10.1088/1674-1137/33/2/015

Identification of pore size in porous SiO₂ thin film by positron annihilation

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Abstract：
Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO₂ thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75:25 at.-% (Al75Si25) target with the radiofrequency (RF) power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the Al cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO₂ on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO₂ thin film is τ=7.80 ns. With these values of lifetime, RTE (Rectangular Pore Extension) model has been used to analyze the pore size.

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ZHANG Zhe, QIN Xiu-Bo, WANG Dan-Ni, YU Run-Sheng, WANG Qiao-Zhan, MA Yan-Yun and WANG Bao-Yi. Identification of pore size in porous SiO₂ thin film by positron annihilation[J]. Chinese Physics C, 2009, 33(2): 156-160. doi: 10.1088/1674-1137/33/2/015

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Received: 2008-05-12
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Identification of pore size in porous SiO₂ thin film by positron annihilation

Corresponding author: WANG Bao-Yi,

Received Date: 2008-05-12

Accepted Date: 2008-06-05

Available Online: 2009-02-05

Abstract:

Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO₂ thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75:25 at.-% (Al75Si25) target with the radiofrequency (RF) power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the Al cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO₂ on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO₂ thin film is τ=7.80 ns. With these values of lifetime, RTE (Rectangular Pore Extension) model has been used to analyze the pore size.

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Identification of pore size in porous SiO₂ thin film by positron annihilation

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Identification of pore size in porous SiO2 thin film by positron annihilation

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Identification of pore size in porous SiO₂ thin film by positron annihilation

Identification of pore size in porous SiO₂ thin film by positron annihilation