Equivalent properties of single event burnout induced by different sources

YANG Shi-Yu; CAO Zhou; DA Dao-An; XUE Yu-Xiong

doi:10.1088/1674-1137/33/5/010

Chinese Physics C> 2009, Vol. 33> Issue(5) : 369-373 DOI: 10.1088/1674-1137/33/5/010

Equivalent properties of single event burnout induced by different sources

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Abstract：
The experimental results of single event burnout induced by heavy ions and ²⁵²Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by ²⁵²Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the ``turn-off'' state is more susceptible to single event burnout than it is in the ``turn-on'' state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and ²⁵²Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout.

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YANG Shi-Yu, CAO Zhou, DA Dao-An and XUE Yu-Xiong. Equivalent properties of single event burnout induced by different sources[J]. Chinese Physics C, 2009, 33(5): 369-373. doi: 10.1088/1674-1137/33/5/010

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Received: 2008-06-12
Revised: 2008-11-03

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Equivalent properties of single event burnout induced by different sources

Corresponding author: YANG Shi-Yu,

Received Date: 2008-06-12

Accepted Date: 2008-11-03

Available Online: 2009-05-05

Abstract:

The experimental results of single event burnout induced by heavy ions and ²⁵²Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by ²⁵²Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the ``turn-off'' state is more susceptible to single event burnout than it is in the ``turn-on'' state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and ²⁵²Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout.

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Equivalent properties of single event burnout induced by different sources

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