Simulation and design of an X-band overmoded input cavity

Yang Wu; Yong-Dong Chen; De-Kui Zhao

doi:10.1088/1674-1137/40/6/067002

Chinese Physics C> 2016, Vol. 40> Issue(6) : 067002 DOI: 10.1088/1674-1137/40/6/067002

Simulation and design of an X-band overmoded input cavity

1.
Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China
2.
Sciebce and Technology on High Power Microwave Laboratory, Mianyang 621900, China
3.
Sichuan University of Science and Engineering, Zigong 643000, China

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Abstract：
The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of power capacity in the high frequency band due to the scaling law of the working frequency and device size. In this paper, an X-band overmoded input cavity is proposed and investigated. A resonant reflector is employed to reflect the microwave and isolate the input cavity from the diode and RF extractor. The resonant property of the overmoded input cavity is proved by simulations and cold tests, with PIC simulation showing that with a beam voltage of 600 kV and current of 7 kA, an input power of 90 kW is sufficient to modulate the beam with a modulation depth of 3%.
- X-band ,
- overmoded input cavity ,
- relativistic klystron amplifier ,
- phase-locked oscillator

References

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Yang Wu, Yong-Dong Chen and De-Kui Zhao. Simulation and design of an X-band overmoded input cavity[J]. Chinese Physics C, 2016, 40(6): 067002. doi: 10.1088/1674-1137/40/6/067002

Yang Wu, Yong-Dong Chen and De-Kui Zhao. Simulation and design of an X-band overmoded input cavity[J]. Chinese Physics C, 2016, 40(6): 067002. doi: 10.1088/1674-1137/40/6/067002 shu

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Received: 2015-05-06

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Supported by Talent Introduction Profect of Sichuan University of Science and Engineering (2013 RC09)

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Simulation and design of an X-band overmoded input cavity

Corresponding author: Yong-Dong Chen,

1. Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China

2. Sciebce and Technology on High Power Microwave Laboratory, Mianyang 621900, China

3. Sichuan University of Science and Engineering, Zigong 643000, China

Received Date: 2015-05-06

Available Online: 2016-06-05

Fund Project: Supported by Talent Introduction Profect of Sichuan University of Science and Engineering (2013 RC09)

Abstract: The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of power capacity in the high frequency band due to the scaling law of the working frequency and device size. In this paper, an X-band overmoded input cavity is proposed and investigated. A resonant reflector is employed to reflect the microwave and isolate the input cavity from the diode and RF extractor. The resonant property of the overmoded input cavity is proved by simulations and cold tests, with PIC simulation showing that with a beam voltage of 600 kV and current of 7 kA, an input power of 90 kW is sufficient to modulate the beam with a modulation depth of 3%.

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Simulation and design of an X-band overmoded input cavity

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