Study on InP Doped With Sulphur and Under DifferentTemperatures by Positron Annihilation

Huang Maorong; Wang Yunyu; Yang Juhua; He Yongshu; Guo Yinghuan; Sun Tonghan

Chinese Physics C> 1996, Vol. 20> Issue(12) : 1097-1102

Study on InP Doped With Sulphur and Under DifferentTemperatures by Positron Annihilation

Institute of High Energy Physics,The Chemise Acadmp of Sciences,Beijing 1000801 The Thirteenth Institute of the Ministry of Electronic Industry, Shijiazhuang,Hebei 050051

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Abstract：
In this paper,the influences of charge carrier concentration(n),mobility and temperature on vacancy concentration(Cd)were studied by positron annihilation in Inp doped with sulphur.The mechanisms of the influences of charge carrier concentration,mobility and temperature in vacancy are discussed.The types of vacancy are discussed too.

References

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Huang Maorong, Wang Yunyu, Yang Juhua, He Yongshu, Guo Yinghuan and Sun Tonghan. Study on InP Doped With Sulphur and Under DifferentTemperatures by Positron Annihilation[J]. Chinese Physics C, 1996, 20(12): 1097-1102.

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Received: 1900-01-01
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沈阳化工大学材料科学与工程学院沈阳 110142

Study on InP Doped With Sulphur and Under DifferentTemperatures by Positron Annihilation

Corresponding author: Huang Maorong,

Institute of High Energy Physics,The Chemise Acadmp of Sciences,Beijing 1000801 The Thirteenth Institute of the Ministry of Electronic Industry, Shijiazhuang,Hebei 050051

Received Date: 1900-01-01

Accepted Date: 1900-01-01

Available Online: 1996-12-05

Abstract: In this paper,the influences of charge carrier concentration(n),mobility and temperature on vacancy concentration(Cd)were studied by positron annihilation in Inp doped with sulphur.The mechanisms of the influences of charge carrier concentration,mobility and temperature in vacancy are discussed.The types of vacancy are discussed too.

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Study on InP Doped With Sulphur and Under DifferentTemperatures by Positron Annihilation

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