Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

SONG Yin; ZHANG Cong-Hong; WANG Zhi-Guang; ZHAO Zhi-Ming; DUAN Jin-Lai; YAO Cun-Feng

Chinese Physics C> 2005, Vol. 29> Issue(11) : 1112-1114

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

Institute of Modern Physics,CAS,Lanzhou 730000,China

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Abstract：
In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.

References

[1]	. Gourary B S, Adrian F J. Solid State Phys., 1960, 10: 1272. La S Y, Bartram R H, Cox R T. J. Phys. Chem. Solids.,1973, 34: 10793. Bruce D. Evans. Journal of Nuclear Materials, 1995, 219:202—223

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[2]	YANG Wei-Fan , DING Hua-Jie , YUAN Shuang-Gui , XU Yan-Bing , ZHANG Sheng-Dong , LU Xi-Ting . Production cross-section of ²³⁰Ra in the reaction of 60 MeV/u ¹⁸O ions with ²³⁸U. Chinese Physics C, 2008, 32(S2): 56-58.
[3]	ZHAO Zhi-Ming , WANG Zhi-Guang , SONG Yin , JIN Yun-Fan , SUN You-Mei . FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation. Chinese Physics C, 2005, 29(8): 824-829.
[4]	WANG Rong , XU Yong-Jun , ZHU Jia-Zheng , ZHENG Yong-Nan , ZHOU Dong-Mei , ZHU Sheng-Yun . Voids in α–Al₂O₃ Irradiated by 85 MeV ¹⁹F Ions. Chinese Physics C, 2003, 27(7): 649-652.
[5]	YANG Peng-Cheng , CAI Xiao-Hai , HAO Jun-Chang , ZI Feng-Lan , XIE You-Chang , HU Tian-Dou , XIE Ya-Ning , ZHANG Jing . EXAFS Study of ZnO/γ-Al₂O₃ Prepared by Co-Precipitation Method. Chinese Physics C, 2001, 25(S1): 17-20.
[6]	YE Wei , SHEN WenQing . Effect of Deformation on Prescission Particle Emission in the Reaction of 10.6 MeV/u ⁸⁴Kr+²⁷Al. Chinese Physics C, 2000, 24(10): 945-948.
[7]	Wang Qi , Tian Wendong , Li Songlin , Lu Jun , Hu Pengyun , Jiang Zhonghe . Extraction of Nuclear Temperature in ²⁷Al+²⁷Al Dissipative Collision. Chinese Physics C, 1999, 23(6): 518-522.
[8]	He Zhiyong¹ , J.Peter² , J.C.Angelique² , G.Bizard² , R.Brou² , D.Cussol² , A.Kerambrun² , J.P.Patry² , R.Regimbart² , J.C.Steckmeyerr² , B.Tamain² , E.Vient² , G.Auger³ , C.Cabot<sup . Study of Collective Flow for ⁶⁴Zn+²⁷Al, Collisions at 57 MeV/u. Chinese Physics C, 1994, 18(9): 800-806.
[9]	CHEN Zhi-Qian , ZHENG Ren-Rong , YIN Chuan-Zong . Mossbauer Study of GdBa₂Cu₃O_7－δ. Chinese Physics C, 1992, 16(5): 385-389.
[10]	Yin Xu , Sheri Wenqing , Zhu Yongtai , Feng Enpu , Wang Qi , Xie Yuanxiang , Zhan Wenlong , Li Songlin . The Study of the Dissipation Process and the Nucleon Transfer Produced by the 80.9 MeV ¹⁶O on ²⁷Al. Chinese Physics C, 1988, 12(S4): 405-414.
[11]	YIN Xu , SHEN Wen-Qing , ZHU Yong-Tai , ZHAN Wen-Long , FENG En-Pu , XIE Yuan-Xiang , WANG Qi , LI Song-Lin . THE RESEARCH OF THE DISSIPATION PROCESS AND THE NUCLEON TRANSFER PRODUCED BY 80.9MeV ¹⁶O ON ²⁷Al. Chinese Physics C, 1988, 12(4): 521-528.
[12]	GUO Zhong-Yan , SHEN Wen-Qing , ZHU Yong-Tai , QIAO Wei-Min , YIN Shu-Zhi , ZHAN Wen-Long , WU En-Jiu . THE RESEARCH OF DIC PROCESS INDUCED BY 92MeV AND 77MeV ¹⁴N AND ²⁷Al. Chinese Physics C, 1987, 11(4): 496-504.
[13]	SHEN Wen-Qing , ZHAN Wen-Long , ZHU Yong-Tai , YIN Shu-Zhi , GUO Zhong-Yan , QI Wei-Min , FAN Guo-Ying , JIN Gen-Ming , LI Song-Lin , ZHANG Zhen , ZHANG Yu-Hu . COINCIDENCE MEASUREMENT BETWEEN α-PARTICLES AND PROJECTILE-LIKE FRAGMENTS IN REACTION OF 82.7MeV ¹⁶O ON ²⁷Al. Chinese Physics C, 1987, 11(1): 104-110.
[14]	SHEN Wen-Qing , ZHU Yong-Tai , ZHAN Wen-Long , GUO Zhong-Yan , YIN Shu-Zhi , QIAO Wei-Min , WU En-Jiu . INVESTIGATION OF ¹⁶O+²⁷Al REACTION AT BOMBARDING ENERGIES BELOW 5.3MeV/A. Chinese Physics C, 1987, 11(2): 250-258.
[15]	FENG En-Pu , WANG Qi , ZHU Yong-Tai , YIN Xu , MIAO He-Bin , SUN Shu-Ming , LI Song-Lin , WU Zhong-Li , FAN Guo-Ying , XIE Yuan-Xiang , ZHAN Wen-Long . STUDY OF DEEP INELASTIC COLLISION ¹²C+²⁷Al AT ENERGY 61.8MeV. Chinese Physics C, 1986, 10(3): 323-329.
[16]	ZHAN Wen-Long , SHEN Wen-Qing , ZHU Yong-Tai , QIAO Wei-Min , YIN Shu-Zhi , FAN Guo-Ying , JIN Gen-Ming , LI Song-Ling . THE STUDY OF α-EMISSION INDUCED BY ¹⁶O ON ²⁷Al. Chinese Physics C, 1986, 10(1): 63-67.
[17]	SHEN Wen-Qing , YIN Shu-Lan , GUO Zhong-Yan , ZHAN Wen-Long , ZHU Yong-Tai , JIN Gen-Ming , QIAO Wei-Min , WU En-Jiu , JIANG Cheng-Lie . MEASURMENT OF PROJECTILE-LIKE FRAGMENTS PRODUCED BY 80.6MeV¹⁶O ON ²⁷Al. Chinese Physics C, 1985, 9(3): 332-340.
[18]	SHEN Wen-Qing , ZHU Yong-Tai , YIN Shu-Zhi , GUO Zhong-Yan , ZHAN Wen-Long , JIN Gen-Ming , QIAO Wei-Min , WU En-Jiu , JIANG Cheng-Lie . RESEARCH OF RELAXATION PROCESS INDUCED BY 80.6MeV ¹⁶O ON ²⁷Al. Chinese Physics C, 1985, 9(5): 611-617.
[19]	XIE Yuan-Xiang , ZHU Young-Tai , FEN En-Pu , YIN Xu , MIAO He-Bing , CAI Jing-Xiang , LI Fa-Wei , SHEN Wen-Qing , SUN Shu-Ming , WEI Jian-Jun , LI Song-Ling , XIAO Qing-Xian , WANG Qi , JIA Sheng-Ming , DUO Han-Hong . INVESTIGATION OF DIC FOR REACTION ¹²C+²⁷Al AT ENERGY 68MeV AND FOR REACTION ¹²C+^natCa AT ENERGY 68.6MeV. Chinese Physics C, 1984, 8(6): 748-754.
[20]	SUN CHI-CHANG , HE YI SHEN , JIU-SHENG , CHEN HOU , CHEN KE-LIANG . THE MEASUREMENT OF COMPLETE FUSION CROSS-SECTIONS FOR THE REACTIONS ¹²C+²⁷Al, ¹²C+²⁰⁹Bi AND ¹⁴N+Pb. Chinese Physics C, 1978, 2(2): 151-157.

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SONG Yin, ZHANG Cong-Hong, WANG Zhi-Guang, ZHAO Zhi-Ming, DUAN Jin-Lai and YAO Cun-Feng. Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation[J]. Chinese Physics C, 2005, 29(11): 1112-1114.

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Received: 2005-01-24
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

Corresponding author: SONG Yin,

Institute of Modern Physics,CAS,Lanzhou 730000,China

Received Date: 2005-01-24

Accepted Date: 1900-01-01

Available Online: 2005-11-05

Abstract: In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.

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Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

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