Impact factor of Chinese Physics C is 3.6 in 2023 Impact factor of Chinese Physics C is 3.6 in 2022 2021 Impact Factor 2.944
Advanced Search
×
近期发现有不法分子冒充我刊与作者联系，借此进行欺诈等不法行为，请广大作者加以鉴别，如遇诈骗行为，请第一时间与我刊编辑部联系确认（《中国物理C》（英文）编辑部电话：010-88235947,010-88236950），并作报警处理。
本刊再次郑重声明：
（1）本刊官方网址为cpc.ihep.ac.cn和https://iopscience.iop.org/journal/1674-1137
（2）本刊采编系统作者中心是投稿的唯一路径，该系统为ScholarOne远程稿件采编系统，仅在本刊投稿网网址（https://mc03.manuscriptcentral.com/cpc）设有登录入口。本刊不接受其他方式的投稿，如打印稿投稿、E-mail信箱投稿等，若以此种方式接收投稿均为假冒。
（3）所有投稿均需经过严格的同行评议、编辑加工后方可发表，本刊不存在所谓的“编辑部内部征稿”。如果有人以“编辑部内部人员”名义帮助作者发稿，并收取发表费用，均为假冒。
                  
《中国物理C》（英文）编辑部
2024年10月30日
Chinese Physics C> 2008, Vol. 32> Issue(S2) : 251-254 

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

  • Amorphous SiO2 thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×1017, 5.0×1017 or 1.2×1018 ions/cm2, then irradiated at RT by 853 MeV Pb ions to 5.0×1011, 1.0×1012, 2.0×1012 or 5.0×1012 ions/cm2, respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0×1012 Pb-ions/cm2 irradiation produced huge blue and green light-emitters in 2.0×1017 C-ions/cm2 implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×1017 carbon-ions/cm2 implanted samples, 2.0×1012 Pb-ions/cm2 irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×1012 Pb-ions/cm2 irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×1018 carbon-ions/cm2 implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO2-based light-emission materials.
  • 加载中

  • References

    [1] . Hayashi S, Nagareda T, Kanzawa Y et al. J. J. Appl. Phys.,1993, 32: 3840-38452. Mutti P, Ghislotti G, Bertoni S et al. Appl. Phys. Lett.,1995, 66: 851-8533. Choi W C, Lee M S, Kim E K et al. Appl. Phys. Lett.,1996, 69: 3402-34044. QIN G G, SONG H Z, ZHANG B R et al. Phys. Rev. B,1996, 54: 2548-25555. Sias U S, Amaral L, Behar M et al. Nucl. Instrum. Methods B, 2006, 242: 109-1136. Garrido B, Lopez M, Ferre S et al. Nucl. Instrum. Methods B, 1996, 120: 101-1057. Garrido B, Samitier J, Morante J R et al. Phys. Rev. B,1994, 49: 14845-148498. SONG H Z, BAO X M, LI N S et al. J. Appl. Phy., 1997,82: 4028-40329. YU Y H, WONG S P, Wilson I H. Phys. Stat. Sol. A, 1998,168: 531-53410. WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods B, 2003,209: 200-20411. WANG Z G, LIU J, ZHU Z Y et al. Nucl. Instrum. MethodsB, 2002, 191: 396-40012. WANG Z G, XIE E Q, JIN Y F et al. Nucl. Instrum. Methods B, 2001, 179: 289-29313. Ziegler J F. Nucl. Instrum. Methods B, 2004, 219-220:1027-103614. ZHAO J, MAO D S, LIN Z X et al. Nucl. Instrum. MethodsB, 1999,149: 325-33015. Tohmon R, Shimogaishi Y, Mizuno H et al. Phys. Rev.Lett., 1989, 62: 1388-139116. LI F M, Nathan A. CCD Image Sensors in Deep-Ultraviolet. Heidelberg: Springer, 2005. 51-7917. Seol K S, Ohki Y, Nishikawa H et al. J. Appl. Phys., 1996,80: 6444-644718. Backes W H, Bobbert P A, Vanhaeringen W. Phys. Rev.B, 1994, 49: 7564-756819. WANG Z G, ZHAO Z M, Benyagoub A et al. Nucl. Instrum.Methods B, 2007, 256: 288-292

  • Access

    加载中

Get Citation
LIU Chun-Bao, WANG Zhi-Guang, ZANG Hang, WEI Kong-Fang, YAO Cun-Feng, SHENG Yan-Bin, MA Yi-Zhun, A Benyagoub, M Toulemonde and JIN Yun-Fan. Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation[J]. Chinese Physics C, 2008, 32(S2): 251-254.
LIU Chun-Bao, WANG Zhi-Guang, ZANG Hang, WEI Kong-Fang, YAO Cun-Feng, SHENG Yan-Bin, MA Yi-Zhun, A Benyagoub, M Toulemonde and JIN Yun-Fan. Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation[J]. Chinese Physics C, 2008, 32(S2): 251-254. shu
Milestone
Received: 2008-07-17
Revised: 1900-01-01
Article Metric

Article Views(4203)
PDF Downloads(644)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

    Corresponding author: LIU Chun-Bao,
  • Received Date: 2008-07-17
  • Accepted Date: 1900-01-01
  • Available Online: 2008-01-03

Abstract: Amorphous SiO2 thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×1017, 5.0×1017 or 1.2×1018 ions/cm2, then irradiated at RT by 853 MeV Pb ions to 5.0×1011, 1.0×1012, 2.0×1012 or 5.0×1012 ions/cm2, respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0×1012 Pb-ions/cm2 irradiation produced huge blue and green light-emitters in 2.0×1017 C-ions/cm2 implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×1017 carbon-ions/cm2 implanted samples, 2.0×1012 Pb-ions/cm2 irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×1012 Pb-ions/cm2 irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×1018 carbon-ions/cm2 implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO2-based light-emission materials.

    HTML

Reference (1)

目录

Link
IOPScience
SCOAP3
arXiv
Chinese Physical Society
Journal information
Introduction
Editorial Board
Others
Subscribe
Contact us
QQ: 1307685413
Tel: +86-010-88235947
Fax: +86-010-88233126
E-mail: cpc@ihep.ac.cn

  • CPC Website

  • IOP Website

  • CPC WeChat

Copyright © Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Beijing 100049, China 京ICP备05002789号-1

Supported by: Beijing Renhe Information Technology Co. Ltd  E-mail: info@rhhz.net

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return