Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

JIANG Xiao-Ming; JIA Quan-Jie; HU Tian-Dou; HUANG Yu-Ying; ZHENG Wen-Li; HE Wei; XIAN Ding-Chang; SHI Bin; JIANG Zui-Min; WANG Xun

Chinese Physics C> 2001, Vol. 25> Issue(6) : 588-594

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Institute of High Energy Physics, CAS, Beijing 100039,China1 Surface Physics National Key Lab., Fudan University, Shanghai 200433,China

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Abstract：
The X ray standing wave experiment method is established with the double-crystal monochromator and precision 2-circle goniometer at Beijing Synchrotron Radiation Facility. It is used combined with the X-ray diffraction, to investigate the heterostructure of super thin Ge atomic layer within Si crystals. The results show that the Ge_x Si_1－x alloy layer with average x=0.13 was formed in the Si crystal sample due to the segregation of Ge atoms during the preparation. Due to the diffusion of Ge atoms to the crystal surface, the Ge_x Si_1－x alloy layer was disappeared and nearly pure Ge layer was formed on the Si crystal surface after annealing at 650℃.

References

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. Batterman B W,Cole H.Rev.Mod.Phys.,1964,36:6812. Zegenhagen J.Surf.Sci.Rep.,1993,18:1993. Bedzyk M J,Bilderback D H,Bommarito G M et al.Science,1988,241:17884. Bedzyk M J,Bommarito G M,Schildkaut J S.Phys.Rev.Lett.,1989,62:13765. Woodruff D P.Progress in Surface Science,1998,57:16. Warren B E.X-Ray Diffraction.New York:Dover Publications,Inc.,19907. Matsushita T,Hashizume H.In Handbook of Synchrotron Radiation,ed.E.Koch,North Holland Publishing Company,Amsterdam,New York,Oxford,1983,Chapter 4,X-Ray Monochromator. 261—3148. JIA Quan-Jie,ZHENG Wen-Li,WANG Zhou-Guang et al.Acta Physica Sinica(overseas edition),1998,7:695—7029. ZHENG Wen-Li.The Performance of 4W1C Beamline at Beijing Synchrotron Radiation Facility and the Study of Ge Thin Heterostructures in Si Crystal by Synchrotron Radiation.MS thesis(in Chinese)2000(郑文莉.北京同步辐射装置4W1C光束线的性能研究及Si中Ge薄层结构的同步辐射研究.硕士论文.2000)

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JIANG Xiao-Ming, JIA Quan-Jie, HU Tian-Dou, HUANG Yu-Ying, ZHENG Wen-Li, HE Wei, XIAN Ding-Chang, SHI Bin, JIANG Zui-Min and WANG Xun. Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique[J]. Chinese Physics C, 2001, 25(6): 588-594.

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Received: 2000-05-26
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Corresponding author: JIANG Xiao-Ming,

Institute of High Energy Physics, CAS, Beijing 100039,China1 Surface Physics National Key Lab., Fudan University, Shanghai 200433,China

Received Date: 2000-05-26

Accepted Date: 1900-01-01

Available Online: 2001-06-05

Abstract: The X ray standing wave experiment method is established with the double-crystal monochromator and precision 2-circle goniometer at Beijing Synchrotron Radiation Facility. It is used combined with the X-ray diffraction, to investigate the heterostructure of super thin Ge atomic layer within Si crystals. The results show that the Ge_x Si_1－x alloy layer with average x=0.13 was formed in the Si crystal sample due to the segregation of Ge atoms during the preparation. Due to the diffusion of Ge atoms to the crystal surface, the Ge_x Si_1－x alloy layer was disappeared and nearly pure Ge layer was formed on the Si crystal surface after annealing at 650℃.

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Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

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