Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

HE Wei; ZHANG Zheng-Xuan; ZHANG En-Xia; QIAN Cong; TIAN Hao; WANG Xi

Chinese Physics C> 2007, Vol. 31> Issue(4) : 388-390

Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Abstract
HTML
Reference
Related

PDF

Abstract：
The total dose response characteristics of the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers have been improved by implanting silicon ion into the BOX layers. NMOS/SOI transistors with enclosed-gate structure fabricated in SIMOX wafers were exposed to ⁶⁰Co γ-ray radiation. The total-dose radiation hardness of the BOX layers is characterized by the current voltage (I-V) measurements. The experimental results show that the implantation of silicon ion into the BOX layers can greatly reduce back channel threshold voltage shifts (ΔV_th), which increase the BOX layer hardness to total-dose irradiation.

References

[1]

. MA T P, Ressendorfer P V. Ionizing Radiation Effects in MOS Devices and Circuits. John Wiley Sons, Inc., 1989.47-86.2. Giraldo A, Paccagnella A, Minzoni A. Solid-State Electronics, 2000, 44: 981-989.3. Mcwhorter P J, Winokur P S. Appl. Phys. Lett., 1986,48(2): 133-135.4. LIU S T, Balster S, Sinha S et al. IEEE Trans. Nucl. Sci.,1999, 46(6): 1817-1823.5. Nicklaw C J, Pagey M P, Pantelides S T et al. IEEE Trans.Nucl. Sci., 2000, 47(6): 2269-2275.

[1]	BI Da-Wei , ZHANG Zheng-Xuan , ZHANG Shuai , CHEN Ming , YU Wen-Jie , WANG Ru , TIAN Hao , LIU Zhang-Li . Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers. Chinese Physics C, 2009, 33(10): 866-869. doi: 10.1088/1674-1137/33/10/009
[2]	YU Jin-Xiang , CAI Ming-Hui , HAN Jian-Wei . An Atomic Oxygen Device Based on PIG Oxygen Negative Ion Source. Chinese Physics C, 2008, 32(S1): 298-300.
[3]	QIAN Cong , ZHANG Zheng-Xuan , ZHANG Feng , LIN Cheng-Lu . Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide. Chinese Physics C, 2008, 32(2): 130-134. doi: 10.1088/1674-1137/32/2/011
[4]	X.Wu , D.Cole , M.Doleans , G.Machicoane , F.Marti , P.Miller , J.Stetson , M.Steiner , P.Zavodszky , Q.Zhao . Beam Dynamics Studies of ECR Injections for the Coupled Cyclotron Facility at NSCL. Chinese Physics C, 2007, 31(S1): 196-200.
[5]	C.Bieth¹ , J.L.Delvaux² , F.Varenne³ , M.Duval³ , M.P.Bourgarel¹ , J.Fermé¹ . Studies and Design of a Dual Beam Axial Injection System Using H- Cusp Source and ECR Ion Source for He for IBA C70 Cyclotron. Chinese Physics C, 2007, 31(S1): 223-225.
[6]	GONG Hui , LI Jin , YANG Shi-Ming , SHAO Bei-Bei , GONG Guang-Hua , LI Yu-Xiong , XIE Xiao-Xi . Study of the Features of 400nm IMPL RADFET Dosimeter. Chinese Physics C, 2007, 31(3): 283-287.
[7]	F.Ames¹ , R.Baartman¹ , P.Bricault¹ , K.Jayamanna¹ , M.McDonald¹ , M.Olivo¹ , P.Schmor¹ , D.H.L.Yuan¹ , T.Lamy² . ECRIS Charge Breeding at ISAC. Chinese Physics C, 2007, 31(S1): 211-215.
[8]	L.Dumas¹ , C.Hill¹ , D.Hitz² , D.Kuchler¹ , C.Mastrostefano¹ , M.O'Neil¹ , R.Scrivens¹ . Operation of the GTS-LHC Source for the Hadron Injection at CERN. Chinese Physics C, 2007, 31(S1): 51-54.
[9]	WANG Yi , KANG Ke-Jun , CHENG Jian-Ping , LI Yuan-Jing , LI Yang , LAI Yong-Fang , YUE Qian , LI Jin . Aging Test of Multi-gap Resistive Plate Chambers. Chinese Physics C, 2006, 30(5): 441-444.
[10]	LUO Yin-Hong , GONG Jian-Cheng , ZHANG Feng-Qi , GUO Hong-Xia , YAO Zhi-Bin , LI Yong-Hong , GUO Ning . Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment. Chinese Physics C, 2006, 30(1): 79-83.
[11]	ZHANG Hui , WANG Bao-Yi , ZHANG Zhe , WANG Ping , WEI Long , JIA Quan-Jie , WANG Yu-Zhu . Experimental studies on FeS₂ films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method. Chinese Physics C, 2005, 29(S1): 32-36.
[12]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[13]	GUO Wen-Jun , JIANG Huan-Qing , LIU Jian-Ye . Improved Glauber Theory and the Total Reaction Cross Section of the Nucleus-Nucleus Collision. Chinese Physics C, 2001, 25(11): 1092-1099.
[14]	GUO Hong-Xia , CHEN Yu-Sheng , ZHANG Yi-Men , ZHOU Hui , HAN Fu-Bin , GUAN Ying , GONG Jian-Chen . Experimental Study of X-Ray Induced Dose Enhancement Effect Using Synchrotron Radiation. Chinese Physics C, 2001, 25(S1): 1-6.
[15]	LI Cheng , CHEN HongFang , WU Chong , ZHANG YongMing , XU ZiZong , LE Yi , SHAO ChuanFen , SHI ChangXin . Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors. Chinese Physics C, 2000, 24(5): 431-438.
[16]	SHAO Ming , CHEN HongFang , LI Cheng , CHEN Hui , XU ZiZong , WANG ZhaoMin . Testing the Radiation Hardness of Lead Tungstate Scintilating Crystals. Chinese Physics C, 2000, 24(6): 554-559.
[17]	Zhu Zhiyong , Hou Mingdong , Jin Yunfan , Li Changlin , Liu Changlong , Zhang Chonghong , Sun Youmei . Study of Defects in Silicon Irradiated With High Energy Ar Ions. Chinese Physics C, 1999, 23(12): 1248-1252.
[18]	Liu Changlong , Hou Mingdong , Cheng Song , Zhu Zhiyong , Wang Zhiguang , Sun Youmei , Jin Yunfan , Li Changlin . EPR Studies on Defect Production and lts Annealing Behavior in Silicon After High Fluence Ar lon lrradiation. Chinese Physics C, 1998, 22(7): 651-657.
[19]	Gu Weixin . Radiation Damage Tests of Silicon Microstrip Detector. Chinese Physics C, 1997, 21(4): 292-296.
[20]	The Second Experimental Division . RESEARCH ON SOME CHARACTERISTICS AND IMPROVEMENTS OF A 70cm STREAMER CHAMBER. Chinese Physics C, 1983, 7(3): 273-284.

Access

Get Citation

HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia, QIAN Cong, TIAN Hao and WANG Xi. Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation[J]. Chinese Physics C, 2007, 31(4): 388-390.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2006-07-14
Revised: 2006-08-28

Article Metric

Article Views(3358)
PDF Downloads(675)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

Corresponding author: HE Wei,

Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2006-07-14

Accepted Date: 2006-08-28

Available Online: 2007-04-05

Abstract: The total dose response characteristics of the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers have been improved by implanting silicon ion into the BOX layers. NMOS/SOI transistors with enclosed-gate structure fabricated in SIMOX wafers were exposed to ⁶⁰Co γ-ray radiation. The total-dose radiation hardness of the BOX layers is characterized by the current voltage (I-V) measurements. The experimental results show that the implantation of silicon ion into the BOX layers can greatly reduce back channel threshold voltage shifts (ΔV_th), which increase the BOX layer hardness to total-dose irradiation.

HTML

Reference (1)

Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article