A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

MENG Xiang-Ti; HUANG Qiang; MA Yan-Xiu; ZHENG Yong-Nan; FAN Ping; ZHU Sheng-Yun

doi:10.1088/1674-1137/32/6/006

Chinese Physics C> 2008, Vol. 32> Issue(6) : 442-445 DOI: 10.1088/1674-1137/32/6/006

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

Abstract
HTML
Reference
Related

PDF

Abstract：
The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10×10cm^－2 and 1×10⁹ to 2×1012cm^－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰ and 2×10¹² cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

References

[1]

. Dyer C S, Sanderson C, Mugford R et al. IEEE Trans. Nucl.Sci., 2000, 47: 481-4852. Eid E S, Chan T Y, Fossum E R et al. IEEE Trans. Nucl.Sci., 2001, 48: 1796-18063. Bogaerts J, Dierickx B, Mertens R. IEEE Trans. Nucl. Sci.,2002, 49: 1513-15214. MENG Xiang-Ti, KANG Ai-Guo. Study of -Ray Radiation Damage in CMOS Image Sensors, Proc. Chinese Nuclear Society Conf., Wuhan, 2001. 671-673 (in Chinese)5. MENG Xiang-Ti, KANG Ai-Guo. Rare Metals, 2002,21(1): 79-846. MENG Xiang-Ti, KANG Ai-Guo, YOU Zheng. Jpn. J.Appl. Phys., 2002, 41(8B): L919-9217. MENG Xiang-Ti, KANG Ai-Guo, WANG Xing-Yu et al.Semicond. Sci. Technol., 2003, 18: L1-38. HUANG Qiang, MENG Xiang-Ti. Chinese Physics Letters,2007, 24-2: 549-5519. CHEN D T, Fremont C A. Active Pixel with a Pinned Photodiode, 1999, U.S. Patent 588049510. Hopkinson G R. IEEE Trans. Nucl. Sci., 1992, 39-6:2018-2025

[1]	Wei-Wei Qu , Gao-Long Zhang , Guo-Yu Tian , Zhi-Qiang Chen , Shou-Ping Xu , Royichi Wada . Angular distribution measurement for ¹²C fragmentation via ¹²C + ¹²C scattering at 100 MeV/u. Chinese Physics C, 2018, 42(7): 074001. doi: 10.1088/1674-1137/42/7/074001
[2]	F. Koyuncu , A. Soylu . Screening effects on ¹²C+¹²C fusion reaction. Chinese Physics C, 2018, 42(5): 054106. doi: 10.1088/1674-1137/42/5/054106
[3]	E. Ya. Paryev , M. Hartmann , Yu. T. Kiselev . Medium effects in ΛK⁺ pair production by 2.83 GeV protons on nuclei. Chinese Physics C, 2017, 41(12): 124108. doi: 10.1088/1674-1137/41/12/124108
[4]	Qing-Lei Xiu , Hong-Bo Zhu , Teng Yue , Xin-Chou Lou . Study of beamstrahlung effects at CEPC. Chinese Physics C, 2016, 40(5): 053001. doi: 10.1088/1674-1137/40/5/053001
[5]	Zhen-Jie Li , Yun-Cong Jia , Ling-Fei Hu , Peng Liu , Hua-Xiang Yin . Study of silicon pixel sensor for synchrotron radiation detection. Chinese Physics C, 2016, 40(3): 036001. doi: 10.1088/1674-1137/40/3/036001
[6]	LI Yan-Yan , ZHANG Xue-Ying , JU Yong-Qin , MA Fei , ZHANG Hong-Bin , CHEN Liang , GE Hong-Lin , WAN Bo , LUO Peng , ZHOU Bin , ZHANG Yan-Bin , LI Jian-Yang , XU Jun-Kui , WANG Song-Lin , YANG Yong-Wei , YANG Lei . Study of neutron spectra in a water bath from a Pb target irradiated by 250 MeV protons. Chinese Physics C, 2015, 39(4): 044001. doi: 10.1088/1674-1137/39/4/044001
[7]	MENG Fan-Bo , CHEN Xu , PAN Wei-Min , HUANG Tong-Ming , MA Qiang , LIN Hai-Ying , PENG Xiao-Hua . Study and design of RF coupler for Chinese ADS HWR superconducting cavity. Chinese Physics C, 2014, 38(11): 117002. doi: 10.1088/1674-1137/38/11/117002
[8]	GAO Xin , YANG Sheng-Sheng , FENG Zhan-Zu , ZHANG Lei . Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment. Chinese Physics C, 2012, 36(9): 900-904. doi: 10.1088/1674-1137/36/9/019
[9]	HU Zhi-Yuan , LIU Zhang-Li , SHAO Hua , ZHANG Zheng-Xuan , NING Bing-Xu , CHEN Ming , BI Da-Wei , ZOU Shi-Chang . Radiation induced inter-device leakage degradation. Chinese Physics C, 2011, 35(8): 769-773. doi: 10.1088/1674-1137/35/8/013
[10]	HE Bao-Ping , YAO Zhi-Bin , ZHANG Feng-Qi . A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons. Chinese Physics C, 2009, 33(6): 436-439. doi: 10.1088/1674-1137/33/6/006
[11]	TIAN Hao , ZHANG Zheng-Xuan , HE Wei , YU Wen-Jie , WANG Ru , CHEN Ming . Total dose radiation effects on SOI NMOS transistors with different layouts. Chinese Physics C, 2008, 32(8): 645-648. doi: 10.1088/1674-1137/32/8/011
[12]	YU Hai-Jun , LI Yu-Xiong , SHI Jin-Shui , LI Qin , CHEN Nan . Experimental Measurement of X-ray Energy Spectrum for 12 MeV LIA. Chinese Physics C, 2006, 30(S1): 90-92.
[13]	LONG Ji-Dong , LIN Yu-Zheng , LUO Fei , GU Zhuo-Wei , SHI Jin-Shui . Destruction Study of Tantalum Target Impacted by 12MeV Electron Beam. Chinese Physics C, 2004, 28(5): 564-568.
[14]	LI Wen-Xin , LI Yun-Sheng , SUN Ru-Lin , SUN Tong-Yu , WU Ding-Qing , ZHAO Li-Li , ZHENG Yu-Ming , QI Da-Hai , SA Ben-Hao . Study on Target Residues From the Interaction of ¹⁸¹Ta with 45MeV/A ¹²C Ions. Chinese Physics C, 1991, 15(9): 832-835.
[15]	Li Wenxin , Li Yunsheng , Sun Rulin , Sun Tongyu , Wu Dingqing , Zhao Lili , Zheng Yuming , Qi Dahai , Sa Benhao . A Study of the Target Residues from the Interaction of ¹⁸¹Ta with 45 MeV/A ¹²C Ions. Chinese Physics C, 1991, 15(S4): 337-340.
[16]	Li Wenxin , Sun Tongyu , Sun Rulin , Wu Dingqing , Zhao Lili , Jing Genming , Qi Dahai , Sa Benhao . Study on Target Residues from the Interaction of Copper with 44 MeV/A ¹²C Ions. Chinese Physics C, 1990, 14(S4): 417-426.
[17]	Zhu Guoyi , He Jingtang , Gu Yifan , Qian Zhongmin , Chu Guozhu . Study on Radiation Damage of Chinese-made High-Z Scintillation Crystals. Chinese Physics C, 1990, 14(S2): 115-124.
[18]	Zhou Hongyu , Yan Yiming , Fan Guoying , Lan Liqiao , Wang Qi , Sun Shuxu , Hua Ming , Han Chongzhan , Liu Shuzhen , Rong Yaning , Wen Shenlin , Wang Xinfu , Yan Hua , Wang Wanhong , Tang Lin . Study of Associated Gamma Rays from Niobium under 14,9 MeV Neutron Bombardments. Chinese Physics C, 1989, 13(S1): 97-108.
[19]	FENG En-Pu , WANG Qi , ZHU Yong-Tai , YIN Xu , MIAO He-Bin , SUN Shu-Ming , LI Song-Lin , WU Zhong-Li , FAN Guo-Ying , XIE Yuan-Xiang , ZHAN Wen-Long . STUDY OF DEEP INELASTIC COLLISION ¹²C+²⁷Al AT ENERGY 61.8MeV. Chinese Physics C, 1986, 10(3): 323-329.
[20]	SONG Shi-Zhan . PROTONS AND ALPHA PARTICLES EMITTED FROM FISSION INDUCED BY 720MeV ¹²C ON ²³²Th. Chinese Physics C, 1985, 9(2): 200-206.

Access

Get Citation

MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu, ZHENG Yong-Nan, FAN Ping and ZHU Sheng-Yun. A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation[J]. Chinese Physics C, 2008, 32(6): 442-445. doi: 10.1088/1674-1137/32/6/006

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2007-09-10
Revised: 2007-12-02

Article Metric

Article Views(4192)
PDF Downloads(712)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

Corresponding author: ZHU Sheng-Yun,

Received Date: 2007-09-10

Accepted Date: 2007-12-02

Available Online: 2008-06-05

Abstract:

The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10×10cm^－2 and 1×10⁹ to 2×1012cm^－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰ and 2×10¹² cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

HTML

Reference (1)

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article