ELDRS and dose-rate dependence of vertical NPN transistor

ZHENG Yu-Zhan; LU Wu; REN Di-Yuan; WANG Gai-Li; YU Xue-Feng; GUO Qi

doi:10.1088/1674-1137/33/1/010

Chinese Physics C> 2009, Vol. 33> Issue(1) : 47-49 DOI: 10.1088/1674-1137/33/1/010

ELDRS and dose-rate dependence of vertical NPN transistor

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Abstract：
The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO₂-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.

References

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ZHENG Yu-Zhan, LU Wu, REN Di-Yuan, WANG Gai-Li, YU Xue-Feng and GUO Qi. ELDRS and dose-rate dependence of vertical NPN transistor[J]. Chinese Physics C, 2009, 33(1): 47-49. doi: 10.1088/1674-1137/33/1/010

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Received: 2008-04-01
Revised: 2008-05-30

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

ELDRS and dose-rate dependence of vertical NPN transistor

Corresponding author: ZHENG Yu-Zhan,

Received Date: 2008-04-01

Accepted Date: 2008-05-30

Available Online: 2009-01-11

Abstract:

The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO₂-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.

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ELDRS and dose-rate dependence of vertical NPN transistor

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