Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers

BI Da-Wei; ZHANG Zheng-Xuan; ZHANG Shuai; CHEN Ming; YU Wen-Jie; WANG Ru; TIAN Hao; LIU Zhang-Li

doi:10.1088/1674-1137/33/10/009

Chinese Physics C> 2009, Vol. 33> Issue(10) : 866-869 DOI: 10.1088/1674-1137/33/10/009

Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers

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Abstract：
The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presented. At 1 Mrad(Si) radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from －115.5 to －1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.

References

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Auberton-Herve A J. SOI: Materials to Systems. In: IEEE IEDM technical digest. CA: USA, 1996. 3-102 JenkinsWC, LIU S T. IEEE Trans. Nucl. Sci., 1994, 41(6):23173 Mrstik B J, Gouker P, Lawrence R K et al. IEEE Trans.Nucl. Sci., 2003, 50(6): 19474 Cristoloveanu S, Munteanu D, LIU S T. IEEE Trans. Nucl.Sci., 2000, 47(5): 10185 Hefyene N, Cristoloveanu S, Ghibaudo G et al. Solid-StateElectronics, 2000, 44: 17116 JUN B, Fleetwood D M, Schrimpf R D et al. IEEE Trans.Nucl. Sci., 2003, 50(6): 18917 Sato S, Komiya K, Bresson N et al. IEEE Trans. Nucl. Sci.,2005, 52(8): 18078 Muller R S, Kamins T I. Device Electronics for IntergatedCircuits. New Jersey: John Wiley Publishing Company,1986. 4009 Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R et al. IEEE Trans. Nucl. Sci., 2003, 50(3): 52210 Lawrence R K, Ioannou D E, Hughes H L et al. IEEE Trans.Nucl. Sci., 1995, 42(6): 211411 LIU S T, Jenkins W C, Hughes H L. IEEE Trans. Nucl.Sci., 1998, 45(6): 2442

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BI Da-Wei, ZHANG Zheng-Xuan, ZHANG Shuai, CHEN Ming, YU Wen-Jie, WANG Ru, TIAN Hao and LIU Zhang-Li. Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers[J]. Chinese Physics C, 2009, 33(10): 866-869. doi: 10.1088/1674-1137/33/10/009

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Received: 2008-12-22
Revised: 2009-01-22

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沈阳化工大学材料科学与工程学院沈阳 110142

Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers

Corresponding author: BI Da-Wei,

Received Date: 2008-12-22
Accepted Date: 2009-01-22
Available Online: 2009-10-05

Abstract:

The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presented. At 1 Mrad(Si) radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from －115.5 to －1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.