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Chinese Physics C> 2009, Vol. 33> Issue(6) : 436-439 DOI: 10.1088/1674-1137/33/6/006

A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons

  • Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using 60Co gamma rays, 1 MeV electrons and 1—9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (ΔVth) generated by 60Co gamma rays are equal to that of 1 MeV electron and 1—7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (ΔVth) generated by 60Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of 60Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.
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    [1] . ZHANG Ting-Qing, LIU Jia-Lu, LI Jian-Jun et al. Acta Physica Sinica, 1999, 48(12): 2299-2303 (in Chinese)2. FAN Long, REN Di-Yuan, ZHANG Guo-Qiang et al. Chi-nese Journal of Semiconductors, 2000, 21(4): 383-387 (inChinese)3. HE Bao-Ping, WANG Gui-Zhen, ZHOU Hui et al. Acta Physica Sinica, 2003, 52(1): 188-191 (in Chinese)4. HE Bao-Ping, WANG Gui-Zhen, GONG Jian-Chen et al.Acta Physica Sinica, 2003, 52(9): 2239-2243(in Chinese)5. Stassinopoulos E G, Brucker G J, Gunten O Van et al.IEEE Trans. Nucl. Sci., 1984, 31(6): 1444-14476. Tallon R W, Ackerman M R, KempW T et al. IEEE Trans.Nucl. Sci., 1985, 32(6): 4393-43987. Brucker G J, Van Gunten O, Stassinopoulos E G et al.IEEE Trans. Nucl. Sci., 1983, 30(6): 4157-4161

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HE Bao-Ping, YAO Zhi-Bin and ZHANG Feng-Qi. A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons[J]. Chinese Physics C, 2009, 33(6): 436-439. doi: 10.1088/1674-1137/33/6/006
HE Bao-Ping, YAO Zhi-Bin and ZHANG Feng-Qi. A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons[J]. Chinese Physics C, 2009, 33(6): 436-439.  doi: 10.1088/1674-1137/33/6/006 shu
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Received: 2008-09-17
Revised: 2008-11-28
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A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons

    Corresponding author: HE Bao-Ping,
  • Received Date: 2008-09-17
  • Accepted Date: 2008-11-28
  • Available Online: 2009-06-05

Abstract: Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using 60Co gamma rays, 1 MeV electrons and 1—9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (ΔVth) generated by 60Co gamma rays are equal to that of 1 MeV electron and 1—7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (ΔVth) generated by 60Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of 60Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.

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