A comparison of ionizing radiation damage in CMOS devices from <SUP>60</SUP>Co gamma rays, electrons and protons

HE Bao-Ping; YAO Zhi-Bin; ZHANG Feng-Qi

doi:10.1088/1674-1137/33/6/006

Chinese Physics C> 2009, Vol. 33> Issue(6) : 436-439 DOI: 10.1088/1674-1137/33/6/006

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

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Abstract：
Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ⁶⁰Co gamma rays, 1 MeV electrons and 1—9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays are equal to that of 1 MeV electron and 1—7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of ⁶⁰Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.

References

[1]

. ZHANG Ting-Qing, LIU Jia-Lu, LI Jian-Jun et al. Acta Physica Sinica, 1999, 48(12): 2299-2303 (in Chinese)2. FAN Long, REN Di-Yuan, ZHANG Guo-Qiang et al. Chi-nese Journal of Semiconductors, 2000, 21(4): 383-387 (inChinese)3. HE Bao-Ping, WANG Gui-Zhen, ZHOU Hui et al. Acta Physica Sinica, 2003, 52(1): 188-191 (in Chinese)4. HE Bao-Ping, WANG Gui-Zhen, GONG Jian-Chen et al.Acta Physica Sinica, 2003, 52(9): 2239-2243(in Chinese)5. Stassinopoulos E G, Brucker G J, Gunten O Van et al.IEEE Trans. Nucl. Sci., 1984, 31(6): 1444-14476. Tallon R W, Ackerman M R, KempW T et al. IEEE Trans.Nucl. Sci., 1985, 32(6): 4393-43987. Brucker G J, Van Gunten O, Stassinopoulos E G et al.IEEE Trans. Nucl. Sci., 1983, 30(6): 4157-4161

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[13]	Zhang Tianbao , Wang Shuying , Wang Haidong , Shen Zhiqi , Meng Bonian . Precise Measurement of Gamma Ray Energies with HPGe Spectrometer by Slithering Comparison Method. Chinese Physics C, 1993, 17(S1): 25-31.
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[17]	Zhu Guoyi , He Jingtang , Gu Yifan , Qian Zhongmin , Chu Guozhu . Study on Radiation Damage of Chinese-made High-Z Scintillation Crystals. Chinese Physics C, 1990, 14(S2): 115-124.
[18]	WANG Yong-Chang , REN Zhong-Liang , YUAN Jun-Qian , YANG Jing-Kang , XIANG Si-Cang . THE CROSS SECTION MEASUREMENT FOR THE ⁶⁰Ni(n,p)⁶⁰Co REACTION. Chinese Physics C, 1990, 14(10): 923-926.
[19]	WANG Yong-Chang , YUAN Jun-Qian , REN Zhong-Liang , WANG Hua-Min , YANG Jing-Kang , SHUI Yong-Qing , XIANG Si-Cang . THE CROSS SECTION MEASUREMENT FOR THE ⁶³Cu(n,α)⁶⁰Co REACTION. Chinese Physics C, 1990, 14(10): 919-922.
[20]	Zhou Hongyu , Yan Yiming , Fan Guoying , Lan Liqiao , Wang Qi , Sun Shuxu , Hua Ming , Han Chongzhan , Liu Shuzhen , Rong Yaning , Wen Shenlin , Wang Xinfu , Yan Hua , Wang Wanhong , Tang Lin . Study of Associated Gamma Rays from Niobium under 14,9 MeV Neutron Bombardments. Chinese Physics C, 1989, 13(S1): 97-108.

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HE Bao-Ping, YAO Zhi-Bin and ZHANG Feng-Qi. A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons[J]. Chinese Physics C, 2009, 33(6): 436-439. doi: 10.1088/1674-1137/33/6/006

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Received: 2008-09-17
Revised: 2008-11-28

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

Corresponding author: HE Bao-Ping,

Received Date: 2008-09-17

Accepted Date: 2008-11-28

Available Online: 2009-06-05

Abstract: Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ⁶⁰Co gamma rays, 1 MeV electrons and 1—9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays are equal to that of 1 MeV electron and 1—7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of ⁶⁰Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.

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A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

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A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons

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A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons