Application of stratified implantation for silicon micro-strip detectors

LI Hai-Xia; LI Zhan-Kui; WANG Fang-Cong; LI Rong-Hua; CHEN Cui-Hong; WANG Xiu-Hua; RONG Xin-Juan; LIU Feng-Qiong; WANG Zhu-Sheng; LI Chun-Yan; ZU Kai-Ling; LU Zi-Wei

doi:10.1088/1674-1137/39/6/066005

Chinese Physics C> 2015, Vol. 39> Issue(6) : 066005 DOI: 10.1088/1674-1137/39/6/066005

Application of stratified implantation for silicon micro-strip detectors

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In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P⁺ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.

References

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Foad M, Jennings D. Solid State Technology, 1998, 41: 43[2] Wolf S, Tauber R. Silicon Processing for the VLSI Era. Second edition. Sunset Branch, California. 2000, 325[3] Rimini E. Ion Implantation: Basics to Device Fabrication. Boston, Kluwer. 1995, 79[4] El-Kareh B. Fundamentals of Semiconductor Processing Technologies. Boston, Kluwer. 1995, 381[5] Romig T, McManus J, Olander K, Kirk R. Solid State Technology, 1996, 39: 69[6] Mack M. Wafer Cooling and Wafer Charging in Ion Implantation. Amsterdam, Elsevier. 1992, 613[7] Simonton R, Tasch A. Channeling Effects in Ion Implantation. Amsterdam, Elsevier. 1992, 206[8] LI Hai-Xia, LI Zhan-Kui, WANG Fang-Cong et al. Chinese Physics C, 2011, 35(7): 635[9] Sze S M. Physics of Semiconductor Devices. Third edition. Hsinchu, Taiwan: A JOHN WILEY SONS, inc., 1987. 95

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LI Hai-Xia, LI Zhan-Kui, WANG Fang-Cong, LI Rong-Hua, CHEN Cui-Hong, WANG Xiu-Hua, RONG Xin-Juan, LIU Feng-Qiong, WANG Zhu-Sheng, LI Chun-Yan, ZU Kai-Ling and LU Zi-Wei. Application of stratified implantation for silicon micro-strip detectors[J]. Chinese Physics C, 2015, 39(6): 066005. doi: 10.1088/1674-1137/39/6/066005

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Received: 2014-09-18
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Application of stratified implantation for silicon micro-strip detectors

Corresponding author: LI Hai-Xia,

Received Date: 2014-09-18
Accepted Date: 1900-01-01
Available Online: 2015-06-05

Abstract: In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P⁺ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.