Study of the Features of 400nm IMPL RADFET Dosimeter

GONG Hui; LI Jin; YANG Shi-Ming; SHAO Bei-Bei; GONG Guang-Hua; LI Yu-Xiong; XIE Xiao-Xi

Chinese Physics C> 2007, Vol. 31> Issue(3) : 283-287

Study of the Features of 400nm IMPL RADFET Dosimeter

Department of Engineering Physics, Tsinghua University, Beijing 100084, China2 Institute of High Energy Physics, CAS, Beijing 100049, China3 NSRL, University of Science and Technology of China, Hefei 230029, China

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Abstract：
RADFET multi-channel detector will be used to measure the integrated dose near the BESⅢ crystal calorimeter. In the design of this detector, it is significant to know the detailed features of 400nm IMPL RADFET dosimeter. By using ⁶⁰Co source, we made experiments and studied the features of this kind of RADFET dosimeter, including the consistency between different channels, the radiation intensity dependence to the integrated dose measurement and the annealing phenomena of RADFET dosimeter. The study results are very useful for the design of RADFET multi-channel detector and the application of RADFET dosimeter in other fields.

References

[1]

. LIU Chun-Xiu et al. HEP NEP, 2004, 28(4): 335-339(in Chinese)(刘春秀等，高能物理与核物理, 2004, 28(4): 335-339)2. Holmes-Siedle A, Adams L. Radiat. Phys. Chem., 1986, 28:235-2443. Jak#353;ic A, Kimoto Y, Ogourtsov V et al. The Effect of Dierent Biasing Congurations on RADFET ResponseMeasured by Automated and Manual Read-out Systems.Radiation Effect on Components and Systems Conference(RADECS), The Netherlands, Sept. 20034. O'Sullivan M, Kelleher A, Ryan J et al. Proc. ESA Elec-tronic Components Conf., 1990. 281-285

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GONG Hui, LI Jin, YANG Shi-Ming, SHAO Bei-Bei, GONG Guang-Hua, LI Yu-Xiong and XIE Xiao-Xi. Study of the Features of 400nm IMPL RADFET Dosimeter[J]. Chinese Physics C, 2007, 31(3): 283-287.

GONG Hui, LI Jin, YANG Shi-Ming, SHAO Bei-Bei, GONG Guang-Hua, LI Yu-Xiong and XIE Xiao-Xi. Study of the Features of 400nm IMPL RADFET Dosimeter[J]. Chinese Physics C, 2007, 31(3): 283-287. shu

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Received: 2006-05-25
Revised: 2006-06-02

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沈阳化工大学材料科学与工程学院沈阳 110142

Study of the Features of 400nm IMPL RADFET Dosimeter

Corresponding author: GONG Hui,

Department of Engineering Physics, Tsinghua University, Beijing 100084, China2 Institute of High Energy Physics, CAS, Beijing 100049, China3 NSRL, University of Science and Technology of China, Hefei 230029, China

Received Date: 2006-05-25
Accepted Date: 2006-06-02
Available Online: 2007-03-05

Abstract: RADFET multi-channel detector will be used to measure the integrated dose near the BESⅢ crystal calorimeter. In the design of this detector, it is significant to know the detailed features of 400nm IMPL RADFET dosimeter. By using ⁶⁰Co source, we made experiments and studied the features of this kind of RADFET dosimeter, including the consistency between different channels, the radiation intensity dependence to the integrated dose measurement and the annealing phenomena of RADFET dosimeter. The study results are very useful for the design of RADFET multi-channel detector and the application of RADFET dosimeter in other fields.