Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

CHEN Jun; WANG Jian-Feng; ZHANG Ji-Cai; WANG Hui; HUANG Yong; WANG Yu-Tian; YANG Hui; JIA Quan-Jie

Chinese Physics C> 2005, Vol. 29> Issue(S1) : 37-39

Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

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Abstract：
By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction,existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.

References

[1]

. Kato Y, Kitamura S, Hiramatsu K et al. J. of Cryst.Growth, 1994, 144: 133—1402. Nakamura S. In: Proceedings of the Second InternationalConference on Nitride Semiconductor, Tokushima, 19973. Dovidenko K, Oktyabrsky S, Narayan J. J. Appl. Phys.,1997, 82(9): 4296—42994. Rebane Y T, Shreter Y G, Albrecht M. Phys. Stat. Sol.,(a) 1997, 164: 141—1445. Fischer S, Steude G, Hofmann D M et al. J. Cryst. Growth,1998, 189/190: 556—5606. BAI J, Dudley M, CHEN L et al. J. Appl. Phys., 2005,97(11): 1161017. LIU R, Bell A, Ponce F A et al. Appl. Phys. Lett., 2005,86(2): 21908

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CHEN Jun, WANG Jian-Feng, ZHANG Ji-Cai, WANG Hui, HUANG Yong, WANG Yu-Tian, YANG Hui and JIA Quan-Jie. Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation[J]. Chinese Physics C, 2005, 29(S1): 37-39.

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Received: 2005-10-28
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

Corresponding author: CHEN Jun,

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2005-10-28
Accepted Date: 1900-01-01
Available Online: 2005-01-02

Abstract: By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction,existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.