Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

CHEN Jun; WANG Jian-Feng; ZHANG Ji-Cai; WANG Hui; HUANG Yong; WANG Yu-Tian; YANG Hui; JIA Quan-Jie

Chinese Physics C> 2005, Vol. 29> Issue(S1) : 37-39

Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Abstract
HTML
Reference
Related

PDF

Abstract：
By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction,existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.

References

[1]

. Kato Y, Kitamura S, Hiramatsu K et al. J. of Cryst.Growth, 1994, 144: 133—1402. Nakamura S. In: Proceedings of the Second InternationalConference on Nitride Semiconductor, Tokushima, 19973. Dovidenko K, Oktyabrsky S, Narayan J. J. Appl. Phys.,1997, 82(9): 4296—42994. Rebane Y T, Shreter Y G, Albrecht M. Phys. Stat. Sol.,(a) 1997, 164: 141—1445. Fischer S, Steude G, Hofmann D M et al. J. Cryst. Growth,1998, 189/190: 556—5606. BAI J, Dudley M, CHEN L et al. J. Appl. Phys., 2005,97(11): 1161017. LIU R, Bell A, Ponce F A et al. Appl. Phys. Lett., 2005,86(2): 21908

Access

Get Citation

CHEN Jun, WANG Jian-Feng, ZHANG Ji-Cai, WANG Hui, HUANG Yong, WANG Yu-Tian, YANG Hui and JIA Quan-Jie. Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation[J]. Chinese Physics C, 2005, 29(S1): 37-39.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2005-10-28
Revised: 1900-01-01

Article Metric

Article Views(3586)
PDF Downloads(749)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142