Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

Weng Huimin; Zhou Xianyi; Xu Jihua; Sun Shijun; Zhu Jingsheng; Wu Shulan; Han Rongdian

Chinese Physics C> 1993, Vol. 17> Issue(S2) : 101-109

Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

Weng Huimin ¹ ,
Zhou Xianyi ^1,2,5 ,
Xu Jihua ¹ ,
Sun Shijun ¹ ,
Zhu Jingsheng ³ ,
Wu Shulan ¹ ,
Han Rongdian ^1,3,4

1 Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, China;
2 International Center for Materials Physics, Chinese Academy of Sciences, Shenyang, Liaoning, China;
3 Stnicture Research Laboratory, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, Anhui, China;
4 Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China;
5 CCAST(World Laboratory), Beijing, China

Abstract
HTML
Reference
Related

PDF

Abstract：
The interface models were founded, and the expressions of the relation between Doppler broadening S-parameter and the implanted energy of positrons were got based on the diffusion equation of positrons. Interfaces formed between AI overlayer and the (110) surface of GaAs were studied with slow positron beam. We found the system of AI/GaAs interfaces could be well described by the perfectly absorbing linear interface model. From the results fitted by this model, we obtained the relation between the 5-parameter of the interface and the annealing temperatures or the overlayer thickness. The microstructure of interfaces and its dynamical characters were discussed.

[1]	DENG Wen , SUN Xiao-Xiang , TAN Shao-Xi , LI Yu-Xia , XIONG Ding-Kang , HUANG Yu-Yang . Defects and hyperfine interactions in binary Fe-Al alloys studied by positron annihilation and Mössbauer spectroscopies. Chinese Physics C, 2013, 37(12): 128201. doi: 10.1088/1674-1137/37/12/128201
[2]	ZHANG Ai-Wu , XIE Yu-Guang , YU Bo-Xiang , AN Zheng-Hua , WANG Zhi-Gang , CAI Xiao , SUN Xi-Lei , SHI Feng , FANG Jian , XUE Zhen , U Qi-Wen , SUN Li-Jun , GE Yong-Shuai , LIU Ying-Biao , LIU Hong-Bang , ZHENG Yang-Heng , XIE Yi-Gang , HU Tao , ZHOU Li , U Jun-Guang . Performance study of a micro-pattern gas detector: leak microstructure. Chinese Physics C, 2012, 36(10): 985-990. doi: 10.1088/1674-1137/36/10/012
[3]	XU Hong-Xia , LIU Jian-Dang , GAO Chuan-Bo , WENG Hui-Min , YE Bang-Jiao . SIMION simulation of a slow pulsed positron beam. Chinese Physics C, 2012, 36(3): 251-255. doi: 10.1088/1674-1137/36/3/011
[4]	WANG Er-Dong , rg Kewisch , Ilan Ben-Zvi , Andrew Burrill , Trivini Rao , WU Qiong , Animesh Jain , Ramesh Gupta , Doug Holmes , ZHAO Kui . Heat load of a GaAs photocathode in an SRF electron gun. Chinese Physics C, 2011, 35(4): 387-391. doi: 10.1088/1674-1137/35/4/012
[5]	ZHANG Jin-Quan , SONG Ming-Tao , WEI Bao-Wen . Design of slow extraction system for therapy synchrotron. Chinese Physics C, 2009, 33(S2): 30-32. doi: 10.1088/1674-1137/33/S2/008
[6]	FU Yao , FANG De-Qing , MA Yu-Gang , CAI Xiang-Zhou , GUO Wei , MA Chun-Wang , TIAN Wen-Dong , WANG Hong-Wei , WANG Kun . Isoscaling behavior studied by HIPSE model. Chinese Physics C, 2009, 33(S1): 126-129. doi: 10.1088/1674-1137/33/S1/040
[7]	WANG Dan-Ni , ZHANG Lan-Zhi , WANG Bao-Yi , YU Run-Sheng , ZHANG Zhi-Ming , LI Dao-Wu , WEI Long . Positronium annihilation in silica aerogel studied by a positron age-momentum correlation technique. Chinese Physics C, 2009, 33(1): 81-84. doi: 10.1088/1674-1137/33/1/017
[8]	WANG Ping , MA Yan-Yun , QIN Xiu-Bo , ZHANG Zhe , CAO Xing-Zhong , YU Run-Sheng , WANG Bao-Yi . Performance of the plugged-in ²²Na based slow positron beam facility. Chinese Physics C, 2008, 32(3): 243-246. doi: 10.1088/1674-1137/32/3/017
[9]	WANG Bao-Yi , MA Yan-Yun , WANG Ping , CAO Xing-Zhong , QIN Xiu-Bo , ZHANG Zhe , YU Run-Sheng , WEI Long . Development and application of the intense slow positron beam at IHEP. Chinese Physics C, 2008, 32(2): 156-159. doi: 10.1088/1674-1137/32/2/016
[10]	LUO Wen-Yun , WANG Chao-Zhuang , HE Xin-Fu , FAN Sheng , HUANG Xiao-Long , WANG Chuan-Shan . Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs. Chinese Physics C, 2006, 30(11): 1088-1090.
[11]	WANG Ping , CAO Xing-Zhong , MA Yan-Yun , QIN Xiu-Bo , WANG Bao-Yi , MA Chuang-Xin , WEI Long . Design and Construction of the Plugged-in ²²Na Based Slow Positron Beam Facility. Chinese Physics C, 2006, 30(10): 1036-1040.
[12]	MA Yan-Yun , PEI Shi-Lun , CAO Xing-Zhong , WANG Ping , WEI Cun-Feng , MA Chuang-Xing , ZHANG Zhi-Ming , WANG Shu-Hong , WANG Bao-Yi , WEI Long . Design of a Pulsed Low Energy Positron System Based on Beijing Intense Slow Positron Beam. Chinese Physics C, 2006, 30(2): 166-170.
[13]	WEI Cun-Feng , WANG Bao-Yi , WANG Ping , CAO Xing-Zhong , ZHANG Zhi-Ming , MA Yan-Yun , XUE De-Sheng , WEI Long . A Device Used in Pulsed Slow Positron Beam's Stretching. Chinese Physics C, 2006, 30(10): 1010-1013.
[14]	CAO Xing-Zhong , WANG Bao-Yi , WANG Ping , MA Yan-Yun , QIN Xiu-Bo , WEI Long . Performance of Beijing Intense Slow Positron Beam. Chinese Physics C, 2006, 30(12): 1196-1199.
[15]	CAO Xing-Zhong , WANG Bao-Yi , YU Run-Sheng , WEI Cun-Feng , XUE De-Sheng , WEI Long . Design of the Magnetic Field System for Beijing Intense Slow Positron Beam Transportation. Chinese Physics C, 2004, 28(5): 560-563.
[16]	YU Run-Sheng , WANG Bao-Yi , MA Chuang-Xin , CAO Xing-Zhong , PEI Guo-Xi , WEI Long , YE Ming-Han . Computer Simulation for the Real-Sized Electron-Positron Converter on BEPC-LINAC Based Slow Positron Beam. Chinese Physics C, 2001, 25(S1): 135-139.
[17]	HAN Rong-Dian , WENG Hui-Min , ZHOU Xian-Yi , XU Ji-Hua , ZHU Jing-Sheng , LI Xiao-Guang , SHA Jian , WANG Jing-Cheng . Research for Crystallization of Metallic Glass Pd_79.5Ni₄Si_16.5 by Slow Positron Beam. Chinese Physics C, 1993, 17(4): 300-304.
[18]	WENG Hu-Min , ZHOU Xian-Yi , XU Ji-Hua , SUN Shi-Jun , ZHU Jing-Sheng , WU Shu-Lan , HAN Rong-Dian . Microstructure of A1/GaAs Interface Studied by Slow Positron Beam. Chinese Physics C, 1993, 17(9): 775-783.
[19]	Liu Nianzong , Zhang Caidi , Zheng Linsheng , Hu Lidong , Zhao Xiaojian , Zhong Xuechu , Deng Hu , Zhu Shangen , Zhang Ge , Zhang Zhuxiang , Zhang Liangsheng , Zhou Yongshen , Xu Jianguo , Tan Yiping , Han Shurong , Han Ying , Bao Xiumin . Test Beam on the Beijing Electron Positron Collider (BEPC) and Physics Work on It. Chinese Physics C, 1992, 16(S4): 355-366.
[20]	XIONG Xing-Min . A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION. Chinese Physics C, 1986, 10(4): 459-465.

Access

Get Citation

Weng Huimin, Zhou Xianyi, Xu Jihua, Sun Shijun, Zhu Jingsheng, Wu Shulan and Han Rongdian. Microstructure of Al/GaAs Interface Studied by Slow Positron Beam[J]. Chinese Physics C, 1993, 17(S2): 101-109.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 1992-07-13

Fund

Supported by the National Natural Science Foundation of China and the Science Foundations of Structure Research Laboratory, University of Science and Technology of China and Ion Beam Laboratory, Shanghai Institute of Metallurgy, the Chinese Academy Sciences.

Article Metric

Article Views(594)
PDF Downloads(3)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

1 Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, China;

2 International Center for Materials Physics, Chinese Academy of Sciences, Shenyang, Liaoning, China;

3 Stnicture Research Laboratory, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, Anhui, China;

4 Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China;

5 CCAST(World Laboratory), Beijing, China

Received Date: 1992-07-13

Fund Project: Supported by the National Natural Science Foundation of China and the Science Foundations of Structure Research Laboratory, University of Science and Technology of China and Ion Beam Laboratory, Shanghai Institute of Metallurgy, the Chinese Academy Sciences.

Abstract: The interface models were founded, and the expressions of the relation between Doppler broadening S-parameter and the implanted energy of positrons were got based on the diffusion equation of positrons. Interfaces formed between AI overlayer and the (110) surface of GaAs were studied with slow positron beam. We found the system of AI/GaAs interfaces could be well described by the perfectly absorbing linear interface model. From the results fitted by this model, we obtained the relation between the 5-parameter of the interface and the annealing temperatures or the overlayer thickness. The microstructure of interfaces and its dynamical characters were discussed.

Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

Abstract：

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article

Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

HTML

目录