A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION

XIONG Xing-Min

近期发现有不法分子冒充我刊与作者联系，借此进行欺诈等不法行为，请广大作者加以鉴别，如遇诈骗行为，请第一时间与我刊编辑部联系确认（《中国物理C》（英文）编辑部电话：010-88235947,010-88236950），并作报警处理。

本刊再次郑重声明：

（1）本刊官方网址为cpc.ihep.ac.cn和https://iopscience.iop.org/journal/1674-1137

（2）本刊采编系统作者中心是投稿的唯一路径，该系统为ScholarOne远程稿件采编系统，仅在本刊投稿网网址（https://mc03.manuscriptcentral.com/cpc）设有登录入口。本刊不接受其他方式的投稿，如打印稿投稿、E-mail信箱投稿等，若以此种方式接收投稿均为假冒。

（3）所有投稿均需经过严格的同行评议、编辑加工后方可发表，本刊不存在所谓的“编辑部内部征稿”。如果有人以“编辑部内部人员”名义帮助作者发稿，并收取发表费用，均为假冒。

《中国物理C》（英文）编辑部

2024年10月30日

Chinese Physics C> 1986, Vol. 10> Issue(4) : 459-465

A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION

XIONG Xing-Min ^,

Institute of High Energy Physics, Academia Sinica, Beijing

Abstract
HTML
Reference
Related

PDF

Abstract：
The defects in GaAs grown with the melt growth method at 1238℃ and with the Te-doped LPE method in the temperature range 750—950℃ are studied by positron annihilation. The lifetime component τ₂ exhibits a constant value of 312±11ps in the temperature range 800—1238℃. The intensity I₂ increases with the growth temperature. In the Te-doped LPE crystals, the concentration of the positron trap increases linearly with temperature. The trap is considered as Ga vacancy. The results show that doped Te in GaAs induces Ga vacancy.

References

[1]

J. Cheng, J. P. Karins, J. W. Corbett、and L, C. Kimerling, J. Appl. Phys., 50(4)(1979), 2962.[2] O. Takai, Phys. Lett., 76A (1980) , 157.[3] S. Dannefaer, J. Phys., 15 (1982), 599.[4] D. P. Kerr, S. Knpka and B. G. Hogg, Phys. Lett., 88A(1982), 429.[5] P. S. Dobson,P. 'F. Fewster, D.T. J. Hurle, P.W. Hutchinson J. P. Mullin, B. W. Stranghan and A. F. W.Willougbby, Inst.Sytpo: on GaAs and Related Conf. (1978 );Ser., No.45. (1979), 163.[6] 熊兴民, 核技术, 5(1983),11.[7] D. C. Connors, R N.West, Phys Lett., A30 (1969), 24; B. Bergersen, M. J. Stott, Sol Comm., 7(1969), 1203.[8] W. Brands, Phys. Rev., B 3 (1971), 3432.[9] R. G. Fuller, Point Defects in Solids, Vol. 1, ed. by J. H, Grawford Jr., L. M. Slifkin (Plenum Press, New York, London, 1972), Chap. 2.[10] D. V. Lang, R. A, Logan and L. C. Kimerling, Phys. Lett., B15(1977), 4874.

[1]	PEI Guo-Xi , SUN Yao-Lin , LIU Jin-Tong , CHI Yun-Long , LIU Yu-Cheng , LIU Nian-Zong . BEPCⅡ Positron Source. Chinese Physics C, 2006, 30(1): 66-70.
[2]	ZHOU Chun-Lan , ZHANG Tian-Bao , MA Chuang-Xing , ZHANG Zhi-Ming , CAO Xing-Zhong , WANG Bao-Yi , WEI Long . The Analysis of 3γ/2γ in the Measurement of Positron Annihilation Doppler-broadening Spectroscopy. Chinese Physics C, 2006, 30(1): 84-87.
[3]	CAO Xing-Zhong , WANG Bao-Yi , YU Run-Sheng , WEI Cun-Feng , XUE De-Sheng , WEI Long . Design of the Magnetic Field System for Beijing Intense Slow Positron Beam Transportation. Chinese Physics C, 2004, 28(5): 560-563.
[4]	KONG Wei , XI Chuan-Ying , YE Bang-Jiao , WENG Hui-Min , ZHOU Xian-Yi , HAN Rong-Dian . Two-Detector Doppler Broadening of Annihilation Radiation in Metals. Chinese Physics C, 2004, 28(11): 1234-1237.
[5]	ZHOU Chun-Lan , WANG Dan-Ni , HE Chuang-Xin , WANG Bao-Yi , WEI Long , HE Qing , JIA Quan-Jie . Study on Pores and Defect by Synthrotron Radiation Small Angle Reflection Method and Slow Positron Annihilation Technique. Chinese Physics C, 2003, 27(S1): 67-71.
[6]	GOU Wei-Ping , PEI Guo-Xi . Design of BEPCⅡ Positron Source. Chinese Physics C, 2002, 26(3): 279-285.
[7]	Ju Xin , Peng Liangqiang , Deng Bin , Weng Huimin , Han Rongdian . Study on Lithium Fluoride Cluster-Based Nanophase Films by Low Energy Positron Beam. Chinese Physics C, 1997, 21(9): 844-850.
[8]	Huang Maorong , Wang Yunyu , Yang Juhua , He Yongshu , Guo Yinghuan , Sun Tonghan . Study on InP Doped With Sulphur and Under DifferentTemperatures by Positron Annihilation. Chinese Physics C, 1996, 20(12): 1097-1102.
[9]	He Yuanjin , Xin Mingrui , Zhang Tianbao . Measurement of Characteristic Positron Annihilation Lifetime in HgCdTe. Chinese Physics C, 1994, 18(8): 752-756.
[10]	WENG Hu-Min , ZHOU Xian-Yi , XU Ji-Hua , SUN Shi-Jun , ZHU Jing-Sheng , WU Shu-Lan , HAN Rong-Dian . Microstructure of A1/GaAs Interface Studied by Slow Positron Beam. Chinese Physics C, 1993, 17(9): 775-783.
[11]	GUO Xue-Zhe , WENG Hui-Min , HAN Rong-Dian . The Observation of Positron Surface State of Germanium. Chinese Physics C, 1992, 16(11): 961-964.
[12]	WU Ji-Min . Electron,Positron Distribution Function. Chinese Physics C, 1992, 16(6): 518-526.
[13]	ZHOU Xian-Yi , ZHANG Han , YUAN Song-Liu , WANG Shun-Xi , ZHU Jing-Sheng , ZHANG Qi-Rui . 1D-ACAR Spectra of YBa_2－xSr_xCu₃O_y. Chinese Physics C, 1991, 15(11): 961-965.
[14]	HUANG Mao-Rong , GU Hua , WANG Yun-Yu , HE Yong-Shu , YANG Ju-Hua , LIN Jian-Ming , XU Cheng-Huang . Study on KC1 Colorated Center Doped with Na⁺ Crystal by Positron Annihilation. Chinese Physics C, 1991, 15(2): 97-102.
[15]	WANG Shu-Ying , ZHANG Tian-Bao , SHENTU Yan-Min , WANG Hai-Dong , YANG Guang-Min . ON THE NATURE OF THE MEDIUM LIFETIME COMPONENT OF POSITRON ANNIHILATION IN TEFLON POLYMER. Chinese Physics C, 1990, 14(1): 1-7.
[16]	SHEN Ji-Qiang , LONG Qi-Wei , ZHOU Jin , WANG Ke-Lin . ATOMIC DENSITY DISTRIBUTIONS OF GRAIN BOUNDARIES IN METALS AND CHARACTERISTICS OF POSITRON ANNIHILATION LIFETIME SPECTRA. Chinese Physics C, 1989, 13(10): 879-885.
[17]	ZHANG Duan-Ming , LI Guo-Yuan , WANG Jian-An , HE Yuan-Jin . POSITRON ANNIHILATION STUDY OF PHASE TRANSITION IN HIGH-TEMPERATURE SUPERCONDUCTOR Y-Ba-Cu-O. Chinese Physics C, 1989, 13(9): 769-771.
[18]	XIONG Liang-Yue . A PHENOMENOLOGICAL MODEL FOR POSITRON TRAPPING AT DISLOCATIONS. Chinese Physics C, 1988, 12(4): 433-439.
[19]	XIONG Liang-Yue(L.Y.Xiong) . THE ACCURATE DETERMINATION OF SMALL VARIATIONS FOR THE PARAMETERS OF POSITRON LIFETIME SPECTRA IN AMORPHOUS ALLOY. Chinese Physics C, 1986, 10(5): 513-518.
[20]	WANG Shu-Ying . METHOD OF ANALYSING POSITRON ANNIHILATION LIFETIME SPECTRUM WITH A MULTI EXPONENTIAL CURVE FITTING. Chinese Physics C, 1983, 7(4): 408-414.

Access

Get Citation

XIONG Xing-Min. A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION[J]. Chinese Physics C, 1986, 10(4): 459-465.

XIONG Xing-Min. A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION[J]. Chinese Physics C, 1986, 10(4): 459-465. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 1900-01-01
Revised: 1900-01-01

Article Metric

Article Views(1966)
PDF Downloads(446)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION

XIONG Xing-Min ^,

Corresponding author: XIONG Xing-Min,

Institute of High Energy Physics, Academia Sinica, Beijing

Received Date: 1900-01-01
Accepted Date: 1900-01-01
Available Online: 1986-08-05

Abstract: The defects in GaAs grown with the melt growth method at 1238℃ and with the Te-doped LPE method in the temperature range 750—950℃ are studied by positron annihilation. The lifetime component τ₂ exhibits a constant value of 312±11ps in the temperature range 800—1238℃. The intensity I₂ increases with the growth temperature. In the Te-doped LPE crystals, the concentration of the positron trap increases linearly with temperature. The trap is considered as Ga vacancy. The results show that doped Te in GaAs induces Ga vacancy.