Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

ZHENG Wen-Li; JIA Quan-Jie; JIANG Xiao-Ming; JIANG Zui-Min

Chinese Physics C> 2001, Vol. 25> Issue(12) : 1231-1237

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Institute of High Energy Physics, CAS, Beijing 100039, China2 Surface Physics Laboratory, Fudan University, Shanghai 200433, China

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Abstract：
Synchrotron radiation X-ray reflection method is used to study the depth distribution of Ge atoms in Si crystals caused by surface segregation during the MBE growth. The distribution of Ge atoms in Si crystal is found to have asymmetric exponential shape by simulating the experimental reflectivity based on X-ray reflection theory and Parratt method. The distribution decay lengths forward and backward along the growth direction are obtained as 8A and 3A, respectively, and do not change with different thicknesses of the Ge layers. The influences on X-ray reflectivity of different parameters, such as the thickness of the Si cap layer, the decay length, the surface roughness, and the thickness of SiO₂ over the surface are discussed briefly.

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ZHENG Wen-Li, JIA Quan-Jie, JIANG Xiao-Ming and JIANG Zui-Min. Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection[J]. Chinese Physics C, 2001, 25(12): 1231-1237.

ZHENG Wen-Li, JIA Quan-Jie, JIANG Xiao-Ming and JIANG Zui-Min. Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection[J]. Chinese Physics C, 2001, 25(12): 1231-1237. shu

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Received: 2001-01-12
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Corresponding author: ZHENG Wen-Li,

Institute of High Energy Physics, CAS, Beijing 100039, China2 Surface Physics Laboratory, Fudan University, Shanghai 200433, China

Received Date: 2001-01-12
Accepted Date: 1900-01-01
Available Online: 2001-12-05

Abstract: Synchrotron radiation X-ray reflection method is used to study the depth distribution of Ge atoms in Si crystals caused by surface segregation during the MBE growth. The distribution of Ge atoms in Si crystal is found to have asymmetric exponential shape by simulating the experimental reflectivity based on X-ray reflection theory and Parratt method. The distribution decay lengths forward and backward along the growth direction are obtained as 8A and 3A, respectively, and do not change with different thicknesses of the Ge layers. The influences on X-ray reflectivity of different parameters, such as the thickness of the Si cap layer, the decay length, the surface roughness, and the thickness of SiO₂ over the surface are discussed briefly.