Study of Ion Induced Instability in BTCF

LUO Yun; ZHANG Chuang; GUO Zhi-Yuan

Chinese Physics C> 2001, Vol. 25> Issue(5) : 437-442

Study of Ion Induced Instability in BTCF

Institute of High Energy Physics, The Chinese Academy of Sciences, Beijing, 100039, China

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Abstract：
The ion induced instabilities in the electron ring of the proposed Beijing τ-charm factory (BTCF) are studied. First, we calculated the length of the filling gap which can clear the ions produced in last turn, then simulated the process of the fast beam ion instability in BTCF and obtained its growth time, which is consistent with the theoretical prediction.

References

[1]	Raubenheime R T O,Zimmermann F.Phys. Rev.,1995,E52:54872 Stupakov G V,Raubenheimei T O,Zimmermann F.Phys.Rev.,1995,E52:54993 王东,BTCF上极化束研究,中国科学院高能物理研究所博士论文,19984 Zimmermann F.Ion Effectsinthe PEP- High Energy Ring.SLAC/AP111,October,19985 Ohmi K.Phys.Rev.,1997,E55:7750

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LUO Yun, ZHANG Chuang and GUO Zhi-Yuan. Study of Ion Induced Instability in BTCF[J]. Chinese Physics C, 2001, 25(5): 437-442.

LUO Yun, ZHANG Chuang and GUO Zhi-Yuan. Study of Ion Induced Instability in BTCF[J]. Chinese Physics C, 2001, 25(5): 437-442. shu

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Received: 2000-02-14
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study of Ion Induced Instability in BTCF

Corresponding author: LUO Yun,

Institute of High Energy Physics, The Chinese Academy of Sciences, Beijing, 100039, China

Received Date: 2000-02-14
Accepted Date: 1900-01-01
Available Online: 2001-05-05

Abstract: The ion induced instabilities in the electron ring of the proposed Beijing τ-charm factory (BTCF) are studied. First, we calculated the length of the filling gap which can clear the ions produced in last turn, then simulated the process of the fast beam ion instability in BTCF and obtained its growth time, which is consistent with the theoretical prediction.