Statistic Analysis of the Deposited Energy in Single Event Upset Induced by 10—20MeV Neutrons

LI Hua

Chinese Physics C> 2006, Vol. 30> Issue(12) : 1238-1241

Statistic Analysis of the Deposited Energy in Single Event Upset Induced by 10—20MeV Neutrons

LI Hua ^,

Department of Physics, Jinan University, Guangzhou 510632, China

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Abstract：
Based on Monte Carlo simulations, the deposited energies in the single event upset induced by 10—20MeV neutrons in SRAM silicon chip are been statistically analysed. It can provide statistic information about the deposited energy for understanding the random process of the single event upset.

References

[1]

. Ziegler J L, Lanford W A. Science, 1979, 206: 7762. Guenzer C S, Wolicki E A, Allas R G. IEEE Trans. Nucl.Sci., 1979, 26: 50483. Huhtinen M, Faccio F. Nuclear Instruments and Methodsin Physics Research, 2000, A450: 1554. Palau J M, Wrobel R, Castellani-Coulie K et al. IEEETrans. Nucl. Sci., 2002, 49: 30755. LI Hua, NIU Sheng-Li, LI Yuan-Chun et al. Chinese Jour-nal of Computational Physics, 1997, 14: 333(in Chinese)(李华, 牛胜利, 李原春等. 计算物理, 1997, 14: 333)6. LI Hua. Chinese Journal of Computational Physics, 1999,16: 467(in Chinese)(李华. 计算物理, 1999, 16: 467)7. LI Hua, CHEN Shi-Bin. Chinese Journal of ComputationalPhysics, 2002, 19: 168(in Chinese)(李华, 陈世彬. 计算物理, 2002, 19: 168)8. LI H, DENG J Y, CHANG D M. Radiation Measurements,2005, 39(4): 401

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LI Hua. Statistic Analysis of the Deposited Energy in Single Event Upset Induced by 10—20MeV Neutrons[J]. Chinese Physics C, 2006, 30(12): 1238-1241.

LI Hua. Statistic Analysis of the Deposited Energy in Single Event Upset Induced by 10—20MeV Neutrons[J]. Chinese Physics C, 2006, 30(12): 1238-1241. shu

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Received: 2006-07-10
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Statistic Analysis of the Deposited Energy in Single Event Upset Induced by 10—20MeV Neutrons

LI Hua ^,

Corresponding author: LI Hua,

Department of Physics, Jinan University, Guangzhou 510632, China

Received Date: 2006-07-10
Accepted Date: 1900-01-01
Available Online: 2006-12-05

Abstract: Based on Monte Carlo simulations, the deposited energies in the single event upset induced by 10—20MeV neutrons in SRAM silicon chip are been statistically analysed. It can provide statistic information about the deposited energy for understanding the random process of the single event upset.