Surface morphology of He-implanted single-crystalline silicon

LI Bing-Sheng; ZHANG Chong-Hong; ZHOU Li-Hong; YANG Yi-Tao

Chinese Physics C> 2008, Vol. 32> Issue(S2) : 255-258

Surface morphology of He-implanted single-crystalline silicon

Abstract
HTML
Reference
Related

PDF

Abstract：
Single-crystalline Si (100) samples were implanted with 30 keV He²⁺ ions to doses ranging from 2.0×10¹⁶ to 2.0×10¹⁷ions /cm² and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×10¹⁶ ions /cm² implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×10¹⁶ ions /cm² implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×10¹⁷ ions /cm². Exfoliations occurred on the sample surface to a dose of 2.0×10¹⁷ ions /cm². Mechanisms underlying the surface change were discussed.

References

[1]

. Tonini R, Corni F, Frabboni S et al. J. Appl. Phys., 1998,84: 48022. Kinomura A, Horino Y, Nakano Y et al. J. Appl. Phys.,2005, 98: 0661023. ZHANG Miao, ZENG Xu-Chu, Chu Paul K et al. J. Appl.Phys., 1999, 86: 42144. Wong-Leung J, Williams J S, Kinomura A et al. Phys. Rew.B, 1999, 59: 79905. Raineri V, Campisano S U. Appl. Phys. Lett., 1996, 69:17836. Raineri V, Campisano S U. Nucl. Instrum. Methods B,1996, 120: 567. Seager C H, Myers S M, Anderson R A et al. Phys. Rew.B, 1994, 50: 24588. Raineri V, Fallica P G, Percolla G et al. J. Appl. Phys.,1995, 78: 37279. Evans J H. Nucl. Instrum. Methods B, 2002, 196: 12510. Avic Ibrahim, Law Mark. E, Kuryliw Erik et al. J. Appl.Phys., 2004, 95: 245211. Fabnroni S, Gazzadi G C, Felisari L et al. Appl. Phys. Lett.,2004, 85: 168312. Muto S, Matsui T, Tanabe T, J. Nucl. Mater, 2001, 290-293: 13113. QIAN C, Terreault B, Gujrathi S C. Nucl. Instrum. Meth-ods B, 2001, 175-177: 71114. Boldyryeva H, Kishimoto N, Umeda N et al. Nucl. Instrum.Methods B, 2004, 219-220: 95315. Oliviero E, Beaufort M F, Barbot J F et al. J. Appl. Phys.,2001, 89: 533216. Raineri V, Co a S, Szilagyi E et al. Phys. Rev. B, 2000,61: 93717. Ziegler J F, Biersack J P, Littmark U. The stopping andrange of Ions in Solids, Vol.1, Pergamon press, New York,198418. Hastings, Estreicher R, Feldman L C et al. Phys. Rev. Lett.,1993, 70: 164319. Freund L B. Appl Phys. Lett., 1997, 70: 351920. Frabboni S, Corni F, Nobili C et al. Phys. Rev. B, 2004,69: 16520921. Moreno D, Eliezer D. Metallurgical and Materials Transac-tions A, 1997, 28: 755

[1]	Da-Li Zhang , Hong Lu , Huan-Yu Wang , Xin-Qiao Li , Yan-Bing Xu , Zheng-Hua An , Hui Wang , Feng Shi , Ping Wang , Xiao-Yun Zhao , . Beam test of CSES silicon strip detector module. Chinese Physics C, 2017, 41(5): 056101. doi: 10.1088/1674-1137/41/5/056101
[2]	Qing-Yuan Liu , Meng Wang , Marc Winter . Geometry optimization of a barrel silicon pixelated tracker. Chinese Physics C, 2017, 41(8): 086001. doi: 10.1088/1674-1137/41/8/086001
[3]	Zhen-Jie Li , Yun-Cong Jia , Ling-Fei Hu , Peng Liu , Hua-Xiang Yin . Study of silicon pixel sensor for synchrotron radiation detection. Chinese Physics C, 2016, 40(3): 036001. doi: 10.1088/1674-1137/40/3/036001
[4]	Ming Chen , Yong-Chang Huang . Thermodynamic surface system of static black holes and area law. Chinese Physics C, 2016, 40(11): 113101. doi: 10.1088/1674-1137/40/11/113101
[5]	DONG Yi-Fan , ZHANG Fei , QIAO Rui , PENG Wen-Xi , FAN Rui-Rui , GONG Ke , WU Di , WANG Huan-Yu . DAMPE silicon tracker on-board data compression algorithm. Chinese Physics C, 2015, 39(11): 116202. doi: 10.1088/1674-1137/39/11/116202
[6]	LI Hai-Xia , LI Zhan-Kui , WANG Fang-Cong , LI Rong-Hua , CHEN Cui-Hong , WANG Xiu-Hua , RONG Xin-Juan , LIU Feng-Qiong , WANG Zhu-Sheng , LI Chun-Yan , ZU Kai-Ling , LU Zi-Wei . Application of stratified implantation for silicon micro-strip detectors. Chinese Physics C, 2015, 39(6): 066005. doi: 10.1088/1674-1137/39/6/066005
[7]	LI Rong-Hua , LI Zhan-Kui , YANG Lei , LI Dong-Mei , LI Hai-Xia , WANG Zhu-Sheng , CHEN Cui-Hong , TAN Ji-Lian , LIU Feng-Qiong , RONG Xin-Juan , WANG Xiu-Hua , LI Chun-Yan , ZU Kai-Ling , LU Zi-Wei . Phonon contribution to nonionizing energy loss in silicon detectors. Chinese Physics C, 2015, 39(6): 066004. doi: 10.1088/1674-1137/39/6/066004
[8]	ZHANG Fei , FAN Rui-Rui , PENG Wen-Xi , DONG Yi-Fan , GONG Ke , LIANG Xiao-Hua , LIU Ya-Qing , WANG Huan-Yu . A prototype silicon detector system for space cosmic-ray charge measurement. Chinese Physics C, 2014, 38(6): 066101. doi: 10.1088/1674-1137/38/6/066101
[9]	BAO Peng-Fei , LIN Cheng-Jian , YANG Feng , GUO Zhao-Qiao , GUO Tian-Shu , YANG Lei , SUN Li-Jie , JIA Hui-Ming , XU Xin-Xing , MA Nan-Ru , ZHANG Huan-Qiao , LIU Zu-Hua . Development of large-area quadrant silicon detectorfor charged particles. Chinese Physics C, 2014, 38(12): 126001. doi: 10.1088/1674-1137/38/12/126001
[10]	DONG Tie-Kuang , YUN Su-Jun , MA Tao , CHANG Jin , DONG Wu-Dong , ZHANG Xiao-Ping , LI Guo-Long , REN Zhong-Zhou . Production rates of cosmogenic nuclei on the lunar surface. Chinese Physics C, 2014, 38(7): 075101. doi: 10.1088/1674-1137/38/7/075101
[11]	SHI Feng , LU Hong , WANG Huan-Yu , MA Yu-Qian , HU Tao , ZHOU Li , CAI Xiao , SUN Li-Jun , YU Bo-Xiang , FANG Jian , XIE Yu-Guang , AN Zheng-Hua , WANG Zhi-Gang , GAO Min , LI Xin-Qiao , XU Yan-Bing , WANG Ping , SUN Xi-Lei , ZHANG Ai-Wu , XUE Zhen , LIU Hong-Bang , WANG Xiao-Dong , ZHAO Xiao-Yun , ZHENG Yang-Heng , MENG Xiang-Cheng , WANG Hui , . Comparative studies of silicon photomultipliers and traditional vacuum photomultiplier tubes. Chinese Physics C, 2011, 35(1): 50-55. doi: 10.1088/1674-1137/35/1/011
[12]	CHENG Yu , DONG Tie-Kuang , DONG Wu-Dong , REN Zhong-Zhou , XU Ao-Ao . Chemical composition of the lunar surface from neutron leakage fluxes. Chinese Physics C, 2011, 35(8): 735-740. doi: 10.1088/1674-1137/35/8/007
[13]	FENG Lang , GE Yu-Cheng , WANG He , FAN Feng-Ying , QIAO Rui , LU Fei , SONG Yu-Shou , ZHENG Tao , YE Yan-Lin . New test and analysis of position-sensitive-silicon-detector. Chinese Physics C, 2009, 33(1): 50-53. doi: 10.1088/1674-1137/33/1/011
[14]	B. Juliá Díaz . Single photo and electroproduction of pions at. Chinese Physics C, 2009, 33(12): 1296-1301. doi: 10.1088/1674-1137/33/12/041
[15]	LIU Jian-Li , WU Feng-Juan , ZHANG Jing-Bo , TANG Gui-Xin , HUO Lei . Effects of multi-collisions and surface on elliptic flow. Chinese Physics C, 2008, 32(S2): 21-23.
[16]	CHEN Hong-Fei , ZOU Ji-Qing , SHI Wei-Hong , ZOU Hong , HU Ran-Sheng , TIAN Da-Yu . Thermal experiment of silicon PIN detector. Chinese Physics C, 2008, 32(10): 820-824. doi: 10.1088/1674-1137/32/10/011
[17]	WANG Zhuo , LIU Chang-Long , LIU Tian-Yu , WU Pei , ZHANG Xiao-Dong , LI Wen-Xia , LI Meng-Kai , YUAN Bing , LI Wen-Run . Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions. Chinese Physics C, 2008, 32(S2): 265-269.
[18]	LIU Chang-Long . Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon. Chinese Physics C, 2001, 25(12): 1238-1244.
[19]	Shuanquan Luo , Cheng-Shing Wang . Thomas-Fermi Statistical Model Theory for the Surface Energy of Hot Nuclei. Chinese Physics C, 1995, 19(S2): 199-205.
[20]	Jiang Huanqing , Li Yangguo . Surface Production of η Particles in π-A Collisions. Chinese Physics C, 1988, 12(S4): 387-392.

Access

Get Citation

LI Bing-Sheng, ZHANG Chong-Hong, ZHOU Li-Hong and YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon[J]. Chinese Physics C, 2008, 32(S2): 255-258.

LI Bing-Sheng, ZHANG Chong-Hong, ZHOU Li-Hong and YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon[J]. Chinese Physics C, 2008, 32(S2): 255-258. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2008-07-17
Revised: 1900-01-01

Article Metric

Article Views(4539)
PDF Downloads(665)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Surface morphology of He-implanted single-crystalline silicon

Corresponding author: LI Bing-Sheng,

Received Date: 2008-07-17

Accepted Date: 1900-01-01

Available Online: 2008-01-03

Abstract: Single-crystalline Si (100) samples were implanted with 30 keV He²⁺ ions to doses ranging from 2.0×10¹⁶ to 2.0×10¹⁷ions /cm² and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×10¹⁶ ions /cm² implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×10¹⁶ ions /cm² implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×10¹⁷ ions /cm². Exfoliations occurred on the sample surface to a dose of 2.0×10¹⁷ ions /cm². Mechanisms underlying the surface change were discussed.

HTML

Reference (1)

Surface morphology of He-implanted single-crystalline silicon

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article