Development of Multi-Ring Semiconductor Detectors

YAN Sheng-Quan; GUO An-Qiao; LIAN Gang; LIU Wei-Ping; LI Zhi-Hong; BAI Xi-Xiang; WANG Bao-Xiang; ZENG Sheng; GUO Bing

Chinese Physics C> 2005, Vol. 29> Issue(7) : 677-681

Development of Multi-Ring Semiconductor Detectors

China Institute of Atomic Energy,Beijing 102413,China

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Abstract：
A multi-ring semiconductor detector has been developed for the measurement of the angular distributions of nuclear reactions induced by secondary ion beams in inverse kinematics. The advantages of the multi-ring detector are generally discussed and the manufacturing procedure is presented. The detector has 11 independent rings formed in a φ100 mm silicon wafer with the thickness of 300μm. Aφ7 mm hole is cut in the center in order to avoid recording the beam at 0°directly. The active area and the energy resolution of each ring are typically 450 mm2 and 32 keV in FWHM (5.156 MeV αparticles), respectively. The detector is used in the angular distribution measurement of 11C(d,n)12N reaction and the performance is briefly described.

References

[1]

. BAI Xi-Xiang, LIU Wei-Ping, QIN Jiu-Chang et al. Nucl. Phys. ,1995, A588: 273c2. LI An-Li, ZHOU Shu-Hua, LIU Wei-Ping et al. Atomic Energy Science and Technology, 1994, 28: 324(in Chinese)(李安利，周书华，柳卫平等.原子能科学技术，1994,28:324)3. WANG You-Bao, BAI Xi-Xiang, LI Zhi-Chang et al. Atomic EnergyScience and Technology, 1999, 33: 199(in Chinese)(王友宝，白希祥，李志常等.原子能科学技术，1999, 33:199)4. LIU Wei-Ping, LI Zhi-Hong, BAI Xi-Xiang et al. Nuclear Physics,2003, A728: 275 284

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YAN Sheng-Quan, GUO An-Qiao, LIAN Gang, LIU Wei-Ping, LI Zhi-Hong, BAI Xi-Xiang, WANG Bao-Xiang, ZENG Sheng and GUO Bing. Development of Multi-Ring Semiconductor Detectors[J]. Chinese Physics C, 2005, 29(7): 677-681.

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Received: 2004-08-19
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Development of Multi-Ring Semiconductor Detectors

Corresponding author: YAN Sheng-Quan,

China Institute of Atomic Energy,Beijing 102413,China

Received Date: 2004-08-19
Accepted Date: 1900-01-01
Available Online: 2005-07-05

Abstract: A multi-ring semiconductor detector has been developed for the measurement of the angular distributions of nuclear reactions induced by secondary ion beams in inverse kinematics. The advantages of the multi-ring detector are generally discussed and the manufacturing procedure is presented. The detector has 11 independent rings formed in a φ100 mm silicon wafer with the thickness of 300μm. Aφ7 mm hole is cut in the center in order to avoid recording the beam at 0°directly. The active area and the energy resolution of each ring are typically 450 mm2 and 32 keV in FWHM (5.156 MeV αparticles), respectively. The detector is used in the angular distribution measurement of 11C(d,n)12N reaction and the performance is briefly described.