Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application

XIE Cheng-Qing; NIU Jie-Bin; WANG De-Qiang; DONG Li-Jun; CHEN Da-Peng; YI Fu-Ting; ZHANG Ju-Fang

Chinese Physics C> 2005, Vol. 29> Issue(S1) : 140-143

Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application

Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,CAS,Beijing 100010,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100049,China

Abstract
HTML
Reference
Related

PDF

Abstract：
After more than 30 years research and Development, Proximity X-ray lithography has matured considerably and it has many advantages, such as high resolution, long depth of focus, large process latitude, high throughout ,and so on. For X-ray mask absorber, if Au metal is selected, it can only be plated and may pollute the silicon-based integrated circuits. TaSi film can be dry etching and does not pollute the silicon-based integrated circuits, it is a potential candidate for X-ray mask absorber. In this paper , the home-made silicon nitride /TaSi X-ray mask fabrication process is described, unlike the conventional fabrication process, after e-beam exposure and development, is etched Inductively Coupled Plasma(ICP) etching based on SF₆/CHF₃ gas chemistries is used to pattern the TaSi film,using ZEP520 e-beam resist as the barrier layer directly. Primary experimental result demonstrated this X-ray mask fabrication process is feasible.

References

[1]

. Kitayama, Itoga K. J. Vac. Sci. Technol., 2000, B18(6):2950—29542. Khan M, Han G, Tsvid G et al. J. Vac. Sci. Technol., 2001,B19(6): 2423—24273. Toyota E, Hori T, Khan M et al. J. Vac. Sci. Technol., 2001,B19(6): 2428—24334. Selzer R(B), Heaton J. Microelectronic Engineering, 2000,53: 591—5945. Marumoto K, Yabe H, Aya S. J. Vac. Sci. Technol., 2003,B21(1): 207—2136. CHEN Da-Peng, YE Tian-Chun, XIE Chang-Qing et al.Semiconductors, 2001, 22(12): 1529—1531(in Chinese)(陈大鹏，叶甜春，谢常青等.半导体学报，2001, 22(12):1529-1531)

[1]	HE Wei , ZHANG Zheng-Xuan , ZHANG En-Xia , QIAN Cong , TIAN Hao , WANG Xi . Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation. Chinese Physics C, 2007, 31(4): 388-390.
[2]	YU Yu-Hong , XU Hua-Gen , ZHAN Wen-Long , XU Hu-Shan , SU Hong , LI Xiao-Gang , SUN Zhi-Yu , XIAO Zhi-Gang , HU Zheng-Guo , GUO Zhong-Yan , WANG Jian-Song , CHEN Ruo-Fu , FAN R , . Study of the LED Based Light Calibration System for Neutron Wall Detector. Chinese Physics C, 2007, 31(6): 581-585.
[3]	DING Bo-Nan , ZHANG Kai-Zhi , WEN Long , WANG Meng , DAI Zhi-Yong , ZHANG Wen-Wei , LI Hong , WANG Wen-Dou , LI Jin , YANG An-Min , XIE Yu-Tong , CHEN Si-Fu , WANG Hua-Cen , DAI Guang-Sen , SHI Jin-Shui , ZHANG Lin-Wen , DENG Jian-Jun . Development of Dragon-I Injector. Chinese Physics C, 2005, 29(3): 219-223.
[4]	ZHANG Hui , WANG Bao-Yi , ZHANG Zhe , WANG Ping , WEI Long , JIA Quan-Jie , WANG Yu-Zhu . Experimental studies on FeS₂ films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method. Chinese Physics C, 2005, 29(S1): 32-36.
[5]	TAN Ji-Lian , JIN Gen-Ming , WANG Hong-Wei , DUAN Li-Min , YUAN Xiao-Hua , WANG Xiao-Bing , LI Song-Lin , LU Zi-Wei , XU Hu-Shan , NING Bao-Jun , TIAN Da-Yu , WANG Wei , ZHANG Lu . Development of Si Multi-Strip Detector. Chinese Physics C, 2005, 29(4): 383-386.
[6]	ZHOU Chun-Mei , WU Zhen-Dong . Calculation of Absolute Intensities of γ-Rays from α Decay. Chinese Physics C, 2004, 28(10): 1074-1078.
[7]	LONG Ji-Dong , LIN Yu-Zheng , LUO Fei , GU Zhuo-Wei , SHI Jin-Shui . Destruction Study of Tantalum Target Impacted by 12MeV Electron Beam. Chinese Physics C, 2004, 28(5): 564-568.
[8]	CHEN Tao , LI Zhi-Huan , YE Yan-Lin , JIANG Dong-Xing , HUA Hui , LI Xiang-Qing , GE Yu-Cheng , WANG Quan-Jin , PANG Dan-Yang , DI Zhen-Yu . Study of Two-Dimensional Position Sensitive Silicon Detector. Chinese Physics C, 2003, 27(1): 72-75.
[9]	XIE Cheng-Qing , CHEN Da-Peng , LI Bing , WANG De-Qiang , YE Tian-Chun , PENG Liang-Qiang , YI Fu-Ting , HAN Yong , ZHANG Ju-Fang . X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate. Chinese Physics C, 2003, 27(S1): 118-121.
[10]	CHEN Shi-Bin , ZHANG Yi-Men , CHEN Yu-Sheng , HUANG Liu-Xing , ZHANG Yu-Ming . Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon. Chinese Physics C, 2001, 25(4): 365-370.
[11]	PENG Liang-Qiang , YI Fu-Ting , HAN Yong , ZHANG Ju-Fang . Study on Synchrotron Radiation Lithography at BSRF. Chinese Physics C, 2001, 25(S1): 128-130.
[12]	CHEN Di , ZHU Jun , LEI Wei , WANG Sui , ZHANG Da-Cheng , YI Fu-Ting . Study on New Type LIGA Mask Fabrication Technique. Chinese Physics C, 2001, 25(S1): 131-134.
[13]	WANG ZhenXia , WANG WenMin , RUAN MeiLing , XU XunJiang . Turbostractic Boron Nitride Produced by Ion Bombardment. Chinese Physics C, 2000, 24(11): 1055-1059.
[14]	ZHANG DongQing , CUI MingQi , ZHU PeiPing , ZHAO YiDong , CUI CongWu . Self-calibration of Silicon Photodiode in the Soft X Ray Spectral Range. Chinese Physics C, 2000, 24(6): 578-584.
[15]	Zhu Zhiyong , Hou Mingdong , Jin Yunfan , Li Changlin , Liu Changlong , Zhang Chonghong , Sun Youmei . Study of Defects in Silicon Irradiated With High Energy Ar Ions. Chinese Physics C, 1999, 23(12): 1248-1252.
[16]	Gu Weixin . Radiation Damage Tests of Silicon Microstrip Detector. Chinese Physics C, 1997, 21(4): 292-296.
[17]	Xia Shaojian . Studies on Liquid Nitrogen Cooling of Silicon Crystal Monochromator. Chinese Physics C, 1997, 21(7): 664-667.
[18]	Yu Zhongqiang , wang shunshin , Wei Horjer , Chu Minglee , Teng pingkun . Study of the Mcro-gap Chamber. Chinese Physics C, 1997, 21(6): 494-499.
[19]	He Jingtang , Chen Duanbao , Li Zuhao , Mao Yufang , Dong Xiaoli . Experimental Studies on Using Silicon Photodiode as Read-out Component of CsI (Tl) Crystal. Chinese Physics C, 1996, 20(10): 890-893.
[20]	MAO Yu-Fang , GUO Zhao-Qiao , ZHANG Xiu-Feng . The Study of the Silicon Microstrip Detector. Chinese Physics C, 1993, 17(9): 784-789.

Access

Get Citation

XIE Cheng-Qing, NIU Jie-Bin, WANG De-Qiang, DONG Li-Jun, CHEN Da-Peng, YI Fu-Ting and ZHANG Ju-Fang. Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application[J]. Chinese Physics C, 2005, 29(S1): 140-143.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2005-10-31
Revised: 1900-01-01

Article Metric

Article Views(1525)
PDF Downloads(670)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application

Corresponding author: XIE Cheng-Qing,

Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,CAS,Beijing 100010,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100049,China

Received Date: 2005-10-31

Accepted Date: 1900-01-01

Available Online: 2005-01-02

Abstract: After more than 30 years research and Development, Proximity X-ray lithography has matured considerably and it has many advantages, such as high resolution, long depth of focus, large process latitude, high throughout ,and so on. For X-ray mask absorber, if Au metal is selected, it can only be plated and may pollute the silicon-based integrated circuits. TaSi film can be dry etching and does not pollute the silicon-based integrated circuits, it is a potential candidate for X-ray mask absorber. In this paper , the home-made silicon nitride /TaSi X-ray mask fabrication process is described, unlike the conventional fabrication process, after e-beam exposure and development, is etched Inductively Coupled Plasma(ICP) etching based on SF₆/CHF₃ gas chemistries is used to pattern the TaSi film,using ZEP520 e-beam resist as the barrier layer directly. Primary experimental result demonstrated this X-ray mask fabrication process is feasible.

HTML

Reference (1)

Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article