FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

ZHAO Zhi-Ming; WANG Zhi-Guang; SONG Yin; JIN Yun-Fan; SUN You-Mei

Chinese Physics C> 2005, Vol. 29> Issue(8) : 824-829

FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China2 CIRIL,BP5133,14070 Caen Cedex 05,France3 The Graduated School of Chinese Academy of Sciences,Beijing 100049，China

Abstract
HTML
Reference
Related

PDF

Abstract：
SiO₂ films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0×1017, 5.0×1017 or 8.6×1017 C cm-2, and then the C-doped SiO₂ films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0×1011, 1.0×1012 or 3.8×1012 Pb cm-2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR Spectra, we found that significant chemical bonds such as Si-C and Si(C)-O-C bonds were formed in the C doped SiO₂ films after high-energy Pb ion irradiation. It was also found that CO₂ molecule was formed in the high dose C-doped SiO₂ films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO₂ molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO₂ films after high-energy Pb ion irradiation.

References

[1]

Canham L T. App.Phys.Lett. ,1990, 57:10462 Cullis A G, Canham L T, Calott D J. J . Appl. Phys.，1997, 82(3):9093 Brus L. J. Phys. Chem.，1994, 98:35154 Coffa S, Franzò C, Priolo F et al. Nucl. Instrum. Methods, 1996,B120:74-80; Komoda T, Weber J,Homewood K P et al. Nucl.Instorm. Methods,1996, B120:93-96; Tsutomu Shimizu-Iwayama, Setsuo Nakao, Kazuo Saitoh. Nucl.Instrum. Methods,1996, B120:97-100; Garrido B, López M, Ferre S et al. Nucl. Instmm. Methods,1996, B120:101-105; Skompa W, Yankov R A, Rebohle L et al.Nucl. Instrum. Methods,1996, B120:106-109; Barklie R C. Nucl.Instrum. Methods,1996, B120:139-1465 Garrido B, López M. Nucl. Instmm. Methods, 2004, B216:2136 XIE Er-Qing, WANG Zhi-Guang, JIN Yun-Fan. Nuclear Physics Review, 1998, 15(3):166 (in Chinese)(谢二庆，王志光，金运范.原子核物理评论.1998, 15(3):166)7 JIN Yun-Fan, WANG Zhi-Guang. Nuclear Physics Review, 1998,15(2):88 (in Chinese)(金运范，王志光.原子核物理评论.1998, 15(2):88)8 WANG Zhi-Guang, JIN Yun-Fan, HOU Ming-Dong. Nuclear Physics Review, 2000, 17(2):100(in Chinese)(王志光，金运范，侯明东.原子核物理评论.2000, 17(2):100)9 Tarus J, Nordlund K, Keinonen J et al. Nucl. Instmm. Methods,2000,B164:165; Girard J C, Michel A, Tromas C et al. Nucl. Instrum. Methods,2003, B209:85;Som T, Satpati B, Satyam P V et al.Nucl. Instmm. Methods,2003, B212:15110 WANG Zhi-Guang et al. Nuclear Physics Review, 2000, 17(2):189(in Chinese)(王志光等.原子核物理评论.2000, 17(2):189)11 WANG Z G et al. Nucl. Instrum. Methods,2001，B179:L289; WANG Z G, LIU J, ZHU Z Y et al. Nucl. Instmm. Methods,2002, B191:396; WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instmm. Methods,2002, B193:685; WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods,2003, B209:20012 KE Yi-Kan, DONG Hui-Ru. Spectral Analysis. Beijing: Chemical Industry Press,1998 (in Chinese)(柯以侃，董慧茹.光谱分析.北京:化学工业出版社出版，1998)13 Lucovsky G, YANG J, CHAO S S et al. Phys. Rev.，1983,B28(6):322514 Lucovsky G, Manitini M J, Srivastava J K et al. J. Vac. Sci. Tech.，1987, B5:53015 Bullot J, Schmidt M P. Phys. Status. Solidi.，1987, B143:34516 IR Frequencies. www. personal. PSU. edu17 GUAN Zheng-Pin, CAI Guo-Qiang, WU Wen-Fa et al. Nanometer Communication, 2004 ,11(1):1 (in Chinese)(管正平，蔡国强，吴文发等纳米通讯，2004,11(1):1)18 WANG Jian-Jun, Rangel E C, da Cruz N C et al. Nucl. Instnum.Methods, 2000, B166-167:42019 YU M B et al. Thin Solid Films, 2000, 377-378:17720 WANG Zhi-Guang et al. IMPHIRFL Annual Report . 2003 , 55

[1]	LIU Chun-Bao , WANG Zhi-Guang . Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations. Chinese Physics C, 2011, 35(9): 885-889. doi: 10.1088/1674-1137/35/9/019
[2]	ZHANG Zhe , QIN Xiu-Bo , WANG Dan-Ni , YU Run-Sheng , WANG Qiao-Zhan , MA Yan-Yun , WANG Bao-Yi . Identification of pore size in porous SiO₂ thin film by positron annihilation. Chinese Physics C, 2009, 33(2): 156-160. doi: 10.1088/1674-1137/33/2/015
[3]	LIU Chun-Bao , WANG Zhi-Guang , ZANG Hang , WEI Kong-Fang , YAO Cun-Feng , SHENG Yan-Bin , MA Yi-Zhun , A Benyagoub , M Toulemonde , JIN Yun-Fan . Investigation of PL properties of C-doped SiO₂/Si samples after high energy Pb ion irradiation. Chinese Physics C, 2008, 32(S2): 251-254.
[4]	ZHANG Zheng-Jun , HAN Yin-Lu , SHEN Qing-Biao , CAI Chong-Hai . Studies on Energy Spectra of Outgoing Particles in (p,Pb),(p,Bi),(p,Hg) Reactions in Energy Range up to 250MeV. Chinese Physics C, 2007, 31(5): 464-469.
[5]	CHEN Dong-Liang , WU Zi-Yu , WEI Shi-Qiang . MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂ Matrix. Chinese Physics C, 2006, 30(5): 476-480.
[6]	HUA Wei , LI Zhi-Hong , WU Zi-Yu , WU Zong-Hua , HUANG Yu-Ying . The conformational changes of encapsulated cytochrome c in SiO2 sol-gel materials. Chinese Physics C, 2005, 29(S1): 12-15.
[7]	XIAO Wan-Sheng , LI YAN , LIU Jing , WENG Ke-Nan , XIE Hong-Sen . Transformations of Amorphous Silica under High Pressure and High Temperature. Chinese Physics C, 2005, 29(S1): 116-119.
[8]	SONG Yin , ZHANG Cong-Hong , WANG Zhi-Guang , ZHAO Zhi-Ming , DUAN Jin-Lai , YAO Cun-Feng . Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation. Chinese Physics C, 2005, 29(11): 1112-1114.
[9]	JIANG Zhi-Jin , LI Qiang . Study of J/ψ Suppression in Pb-Pb Collisions at 158GeV/c. Chinese Physics C, 2004, 28(8): 846-849.
[10]	WANG Rong , XU Yong-Jun , ZHU Jia-Zheng , ZHENG Yong-Nan , ZHOU Dong-Mei , ZHU Sheng-Yun . Voids in α–Al₂O₃ Irradiated by 85 MeV ¹⁹F Ions. Chinese Physics C, 2003, 27(7): 649-652.
[11]	QI Ze-Ming , ZHANG Guo-Bin , SHI Chao-Shu , LIU Bo , REN Guo-Hao , TAO Ye , XU Jian-Hua . High Efficiency Medical Scintillator Lu₂SiO₅:Ce Studied by VUV Spectra. Chinese Physics C, 2003, 27(S1): 32-34.
[12]	LI Wen-Jian , ZHOU Guang-Ming , WEI Zeng-Quan , WANG Ju-Fang , DANG Bing-Rong , LI Qiang , XIE Hong-Mei . RBE of Cells Irradiated by Carbon Ions. Chinese Physics C, 2002, 26(7): 742-746.
[13]	CHEN XueShi , ZHANG XiaoDong , SHEN ShuiFa , SHI ShuangHui , GU JiaHui . Study on Deformation and Shape Coexistence for ¹⁸⁸Pb. Chinese Physics C, 2000, 24(4): 364-368.
[14]	LIU ChangLong , JIN YunFan , ZHU ZhiYong , SUN YouMei , HOU MingDong , WANG YanBin , WANG ZhiGuang , ZHANG ChongHong , LIU Jie , CHEN XiaoXi , LI BaoQuan . Modifications in Optical Absorption of PET Films by High Energy Ar Ion Irradiation. Chinese Physics C, 2000, 24(7): 685-690.
[15]	LIU ChangLong , JIN YunFan , ZHU ZhiYong , SUN YouMei , HOU MingDong , WANG ZhiGuang , WANG YanBin , ZHANG ChongHong , CHEN XiaoXi , LIU Jie , LI BaoQuan . Infrared Absorption Study of Effects in Semicrystalline Polyethylene Terephthalate Films Induced by 35MeV/u Ar Ions. Chinese Physics C, 2000, 24(4): 352-358.
[16]	Li Yunde , Xu Xiaomei , Liu Lianshou . Direct Hard Photoproduction of J/ψ andγ in High Energy Pb-Pb and Ca-Ca Collisions at LHC. Chinese Physics C, 1999, 23(8): 837-840.
[17]	Zhu Zhiyong , Hou Mingdong , Jin Yunfan , Li Changlin , Liu Changlong , Zhang Chonghong , Sun Youmei . Study of Defects in Silicon Irradiated With High Energy Ar Ions. Chinese Physics C, 1999, 23(12): 1248-1252.
[18]	Zhou Xiaohong , Sun Xiangfu , Lei Xiangguo , Jin Hanjuan , Liu Zhong , Zhang Yuhu , Pan Qiangyan , Guo Yingxiang , Chen Xinfeng , Luo Yixiao , Wen Shuxian , Yuan Guanjun , Li Guangsheng , Yang Chunxiang . Study of Low-lying Level Structure in ¹⁹⁸Pb. Chinese Physics C, 1994, 18(S1): 28-32.
[19]	Chen Qizhou , Li Zhibing , Li Lei , Guo Shuohong . Infrared Vacuum Wavefunction of (2+1)-Dimensional SU(2) Gauge Field. Chinese Physics C, 1994, 18(1): 37-42.
[20]	Li Qingrun , Yang Yongxu . A Study of Carbon Heavy Ion Scattering. Chinese Physics C, 1994, 18(8): 748-751.

Access

Get Citation

ZHAO Zhi-Ming, WANG Zhi-Guang, SONG Yin, JIN Yun-Fan and SUN You-Mei. FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation[J]. Chinese Physics C, 2005, 29(8): 824-829.

ZHAO Zhi-Ming, WANG Zhi-Guang, SONG Yin, JIN Yun-Fan and SUN You-Mei. FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation[J]. Chinese Physics C, 2005, 29(8): 824-829. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2004-11-25
Revised: 1900-01-01

Article Metric

Article Views(3144)
PDF Downloads(572)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

Corresponding author: ZHAO Zhi-Ming,

Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China2 CIRIL,BP5133,14070 Caen Cedex 05,France3 The Graduated School of Chinese Academy of Sciences,Beijing 100049，China

Received Date: 2004-11-25

Accepted Date: 1900-01-01

Available Online: 2005-08-05

Abstract: SiO₂ films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0×1017, 5.0×1017 or 8.6×1017 C cm-2, and then the C-doped SiO₂ films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0×1011, 1.0×1012 or 3.8×1012 Pb cm-2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR Spectra, we found that significant chemical bonds such as Si-C and Si(C)-O-C bonds were formed in the C doped SiO₂ films after high-energy Pb ion irradiation. It was also found that CO₂ molecule was formed in the high dose C-doped SiO₂ films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO₂ molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO₂ films after high-energy Pb ion irradiation.

HTML

Reference (1)

FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article