Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

SONG Ying-Hui; ZHANG Yu-Lin; WEI Qiang; KONG Xiang-Dong

Chinese Physics C> 2005, Vol. 29> Issue(12) : 1219-1224

Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

Institute of Electron Beam,Shandong University,Ji'nan 250061,China

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Abstract：
The complex scattering process of the high-energy(50keV≤E₀≤100keV) electron beams with the Gaussian distribution in resist is simulated by Monte Carlo method with different energy range models. The backscatter coefficient of electrons and energy deposition distributions are presented under different exposure conditions. The simulation results are in good agreement with the experimental data. It is found that, in the energy range 50keV≤E₀≤100keV, higher electron beam energy, thinner resist and lower substrate's atom number will cause lower proximity effect, which agrees with the corresponding experiment. The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.

References

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. REN Li-Ming. Study on Monte Carlo Simulation of Elec-tron Beamm Lithography and Proximity Effect Correc-tion Technique. Doctoral Thesis. Center of Microelectron-ics, The Chinese Academy of Science, 2002(in Chinese)(任黎明.电子束曝光的Monte Carlo模拟及邻近效应校正技术研究.博士论文.中国科学院微电子中心，2002)2. REN Li-Ming, CHEN Bao-Qin. Chinese Journal of Semi-conductors, 2001, 22(12): 1519(in Chinese)(任黎明，陈宝钦.半导体学报，2001, 22(12): 1519)3. TAN Zhen-Yu, He Yan-Cai. Chinese Journal of Computa-tional Physics, 2000, 17(3): 331-336(in Chinese)(谭震宇，何延才，计算物理，2000, 17(3): 331-336)4. Kenji Murata, David F Kyser, Chiu H. Ting. J. Appl.Phys., 1981, 52(7): 43965. Ivin V V, Silakov M V, Babushkin G A et al. Micro-electeonic Engineering, 2003, 69: 5946. Pandey L N, Rustgi M L. J. Appl. Phys., 1989, 66(12):60597. LIU Ming, CHEN Bao-Qin, ZHANG Jian-Hong et al. Mi-crofabrication Technology, 2000 (1): 16(in Chinese)(刘明，陈宝钦，张建宏等.微细加上技术，2000 (1): 16)8. Chang T H P. J. Vac. Sci. Technol, 1975, 12(6): 12719. Murata K, Kawata H, Nagami K et al. J. Vac. Sci. Technol.,1987, B5(1): 12410. Adesida, Shimizu R, Everhart T E. J. Appl. Phys., 1980,51(11): 506211. Joy D C, Lou S. Scanning, 1989, 11(4): 17612. REN Li-Ming, CHEN Bao-Qin. Microfabrication Technol-ogy, 2001 (3): 60(in Chinese)(任黎明，陈宝钦.微细加上技术，2001 (3): 60)13. REN Li-Ming, CHEN Bao-Qin, TAN Zhen-Yu et al. Opto-Electronic Engineering, 2002, 29(3): 24(in Chinese)(任黎明，陈宝钦，谭震宇等.光电工程，2002, 29(3): 24)14. Reimer L, Krefting E R. National Bureau of Standards Spe-cial Publication, 1976, 460: 45

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SONG Ying-Hui, ZHANG Yu-Lin, WEI Qiang and KONG Xiang-Dong. Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist[J]. Chinese Physics C, 2005, 29(12): 1219-1224.

SONG Ying-Hui, ZHANG Yu-Lin, WEI Qiang and KONG Xiang-Dong. Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist[J]. Chinese Physics C, 2005, 29(12): 1219-1224. shu

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Received: 2005-01-04
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

Corresponding author: SONG Ying-Hui,

Institute of Electron Beam,Shandong University,Ji'nan 250061,China

Received Date: 2005-01-04
Accepted Date: 1900-01-01
Available Online: 2005-12-05

Abstract: The complex scattering process of the high-energy(50keV≤E₀≤100keV) electron beams with the Gaussian distribution in resist is simulated by Monte Carlo method with different energy range models. The backscatter coefficient of electrons and energy deposition distributions are presented under different exposure conditions. The simulation results are in good agreement with the experimental data. It is found that, in the energy range 50keV≤E₀≤100keV, higher electron beam energy, thinner resist and lower substrate's atom number will cause lower proximity effect, which agrees with the corresponding experiment. The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.