Properties of a New Kind of MSM Structure Gallium Arsenide Detectors

Le Yi; Li Cheng; Chen Hongfang; Zhang Yongming; Wang Xiaolian; Wang Ligang; Shao Chuanfen; Shi Changxin

Chinese Physics C> 1998, Vol. 22> Issue(12) : 1092-1099

Properties of a New Kind of MSM Structure Gallium Arsenide Detectors

Department of Modern Physics. University of Science and Technology of China, Hefei 2300271 Institute of Microelectronic Technology, Shanghai Jiaotong University, shanghai 200030

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Abstract：
Properties of a new kind of double metal contact GaAs semiconductors have been investigated. We measured the spectra of 5.48MeV α particles from ²⁴¹Am,122keV photons from ⁵⁷Co and 2.27MeV MIPs from ⁹⁰Sr and compared the cce and FWHM of a 3×3mm² GaAs detector before and after 1300rad 662keV photons from ¹³⁷Cs. The test results show that these new Metal-Semiconductor-Metal(MSW) structure semiconductor detectors not only have good particle detection ability at room temperature but also have excellent radiation hardiness.

References

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ATLAS Collaboration. ATLAS Technical Proposal, 1994, CERN/LHCC:71—73[2] O'Auria S, Bates R, De Via C et al. Nucl.Instr. and Meth., 1997, A386:177—185 [3] Debecky F, Darmo J,Hlavac S et al. Nucl.Instr and Meth., 1996, A377:475—478 [4] Chen J W, Frommichem T, Ludwig J et al. Nucl.Instr and Meth., 1995, A365:273—284 [5] Shao Chuanfen,Shi Changxin,Xu Xiuqin.Reserch Progress of SSE(in Chinese), 1996,16(1):24─27(邵传芬,史常忻,徐秀琴.固体电子学研究与进展,1996,16(1):24—27)

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Le Yi, Li Cheng, Chen Hongfang, Zhang Yongming, Wang Xiaolian, Wang Ligang, Shao Chuanfen and Shi Changxin. Properties of a New Kind of MSM Structure Gallium Arsenide Detectors[J]. Chinese Physics C, 1998, 22(12): 1092-1099.

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Received: 1997-12-15
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Properties of a New Kind of MSM Structure Gallium Arsenide Detectors

Corresponding author: Le Yi,

Department of Modern Physics. University of Science and Technology of China, Hefei 2300271 Institute of Microelectronic Technology, Shanghai Jiaotong University, shanghai 200030

Received Date: 1997-12-15
Accepted Date: 1900-01-01
Available Online: 1998-12-05

Abstract: Properties of a new kind of double metal contact GaAs semiconductors have been investigated. We measured the spectra of 5.48MeV α particles from ²⁴¹Am,122keV photons from ⁵⁷Co and 2.27MeV MIPs from ⁹⁰Sr and compared the cce and FWHM of a 3×3mm² GaAs detector before and after 1300rad 662keV photons from ¹³⁷Cs. The test results show that these new Metal-Semiconductor-Metal(MSW) structure semiconductor detectors not only have good particle detection ability at room temperature but also have excellent radiation hardiness.