Radiation Damage Tests of Silicon Microstrip Detector

Gu Weixin

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《中国物理C》（英文）编辑部

2024年10月30日

Chinese Physics C> 1997, Vol. 21> Issue(4) : 292-296

Radiation Damage Tests of Silicon Microstrip Detector

Gu Weixin ^,

Institute of High Energy Physics,The Chinese Academy of Sciences,Beeijing 1000392 Fermilab,Batavia,ILL 60510,U.S.A.

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Abstract：
This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of ‘black hole’after exposed

References

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Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. Chinese Physics C, 1997, 21(4): 292-296.

Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. Chinese Physics C, 1997, 21(4): 292-296. shu

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Received: 1900-01-01
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Radiation Damage Tests of Silicon Microstrip Detector

Gu Weixin ^,

Corresponding author: Gu Weixin,

Institute of High Energy Physics,The Chinese Academy of Sciences,Beeijing 1000392 Fermilab,Batavia,ILL 60510,U.S.A.

Received Date: 1900-01-01
Accepted Date: 1900-01-01
Available Online: 1997-04-05

Abstract: This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of ‘black hole’after exposed