Radiation Damage Tests of Silicon Microstrip Detector

Get Citation
Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. Chinese Physics C, 1997, 21(4): 292-296.
Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. Chinese Physics C, 1997, 21(4): 292-296. shu
Milestone
Received: 1900-01-01
Revised: 1900-01-01
Article Metric

Article Views(2619)
PDF Downloads(611)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Radiation Damage Tests of Silicon Microstrip Detector

    Corresponding author: Gu Weixin,
  • Institute of High Energy Physics,The Chinese Academy of Sciences,Beeijing 1000392 Fermilab,Batavia,ILL 60510,U.S.A.

Abstract: This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of ‘black hole’after exposed

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return